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LA5735M 데이터시트 PDF




Sanyo Semicon Device에서 제조한 전자 부품 LA5735M은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


 

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부품번호 LA5735M 기능
기능 Monolithic Linear IC Separately-Excited Step-Down Switching Regulator
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LA5735M 데이터시트, 핀배열, 회로
Ordering number : ENA0588
LA5735M
Monolithic Linear IC
Separately-Excited Step-Down
Switching Regulator
(Variable Type)
www.DataSheetO4Uv.ceomrview
The LA5735M is a separately-excited step-down switching regulator (variable type).
Functions
Time-base generator (300kHz) incorporated.
Current limiter incorporated.
Thermal shutdown circuit incorporated.
Specifications
Absolute Maximum Ratings at Ta = 25°C
Parameter
Symbol
Conditions
Input voltage
Maximum output current
SW pin application reverse voltage
VOS pin application voltage
Allowable power dissipation
VIN
IO max
VSW
VVOS
Pd max
Mounted on a circuit board.*
Operating temperature
Topr
Storage temperature
Tstg
* Specified circuit board : 114.3×76.1×1.6mm3, glass epoxy board.
Recommended Operating Conditions at Ta = 25°C
Parameter
Input voltage range
Symbol
VIN
Conditions
Ratings
34
0.6
-1
-0.2 to 7
0.8
-30 to +125
-40 to +150
Ratings
4.5 to 32
Unit
V
A
V
V
W
°C
°C
Unit
V
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before using any SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
11707 MS PC 20061030-S00008 No.A0588-1/7




LA5735M pdf, 반도체, 판매, 대치품
LA5735M
Choke coil L1
• Note that choke coil heating due to overload or load shorting may be a problem.
The inductance value can be determined from the following equation once the input voltage, output voltage, and
current ripple conditions are known. IR indicates the ripple current value.
Reference example : VIN = 12V, VOUT = 5V, IR = 150mA
L
=
VIN
-
VOUT
IR
-
Vsat
×
Ton
=
12
-
5.0 -
0.15
1.0
×
1.58
×
10-6
68µH
T
Ton
www.DataSheet4U.com
=
((VIN
-
VOUT
-
Vsat)/(VOUT
+
VF))
+
1
Toff = T - Ton
t : Switching repetition period················· 3.33µs is assumed for the calculation
VF : Schottky diode forward voltage ······ 0.4V is assumed for the calculation
• Inductance current : peak value
The ripple current peak value must be held within the rated current values for the inductor used.
Here, IRP is the peak value of the ripple current. IRP can be determined from the following equation.
Reference example : VIN = 12V, VOUT = 5V, IOUT = 0.5A, L = 68µH
IRP
=
IOUT
+
VIN
-
VOUT
2L
-
Vsat
×
Ton
=
0.5
+
12 - 5.0 - 1.0
2 × 68 × 10-6
×
1.58
×
10-6
0.57A
• Inductance current : ripple current value
Here IR is the ripple current. IR can be determined from the following equation.
If the load current becomes less than one half the ripple current, the inductor current will become discontinuous.
IR
=
VIN
-
VOUT
L
-
Vsat
×
Ton
=
12 - 5.0 - 1.0
68 × 10-6
×
1.58
×
10-6
0.15A
Diode D1
• A Schottky barrier diode must be used for this diode.
If a fast recovery diode is used, it is possible that the IC could be destroyed by the applied reverse voltage due to the
recovery and the on-state voltage.
• Diode current (peak current)
Applications must be designed so that the peak value of the diode current remains within the rated current of the
diode.
The peak value of the diode current will be the same current as the peak value of the inductor current.
• Repetitive peak reverse voltage
Applications must be designed so that the repetitive peak reverse voltage remains within the voltage rating of the
diode.
Here, VRRM is the repetitive peak reverse voltage. VRRM can be determined from the following equation.
VRRM VCC
Since noise voltage and other terms will be added in actual operation, the voltage handling capacity of the device
should be about 1.5 times that given by the above calculation.
No.A0588-4/7

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LA5735M 전자부품, 판매, 대치품
LA5735M
www.DataSheet4U.com
Specifications of any and all SANYO Semiconductor products described or contained herein stipulate the
performance, characteristics, and functions of the described products in the independent state, and are
not guarantees of the performance, characteristics, and functions of the described products as mounted
in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an
independent device, the customer should always evaluate and test devices mounted in the customer's
products or equipment.
SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any
and all semiconductor products fail with some probability. It is possible that these probabilistic failures
could give rise to accidents or events that could endanger human lives, that could give rise to smoke or
fire, or that could cause damage to other property. When designing equipment, adopt safety measures
so that these kinds of accidents or events cannot occur. Such measures include but are not limited to
protective circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO Semiconductor products (including technical data,services) described
or contained herein are controlled under any of applicable local export control laws and regulations, such
products must not be exported without obtaining the export license from the authorities concerned in
accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system, or
otherwise, without the prior written permission of SANYO Semiconductor Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO Semiconductor product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not
guaranteed for volume production. SANYO Semiconductor believes information herein is accurate and
reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual
property rights or other rights of third parties.
This catalog provides information as of January, 2007. Specifications and information herein are subject
to change without notice.
PS No.A0588-7/7

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