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부품번호 | B1020A 기능 |
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기능 | PNP Transistor - 2SB1020A | ||
제조업체 | Toshiba Semiconductor | ||
로고 | |||
전체 5 페이지수
2SB1020A
TOSHIBA Transistor Silicon PNP Triple Diffused Type (Darlington Power)
2SB1020A
High-Power Switching Applications
Hammer Drive, Pulse Motor Drive Applications
Unit: mm
• High DC current gain: hFE = 2000 (min) (VCE = −3 V, IC = −3 A)
• Low saturation voltage: VCE (sat) = −1.5 V (max) (IC = −3 A)
• Complementary to 2SD1415A
Absolute Maximum Ratings (Tc = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC
Pulse
Base current
Collector power
dissipation
Ta = 25°C
Tc = 25°C
Junction temperature
Storage temperature range
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
−100
−100
−5
−7
−10
−0.7
2.0
30
150
−55 to 150
V
V
V
A
A
W
°C
°C
JEDEC
―
JEITA
―
TOSHIBA
2-10R1A
Weight: 1.7 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Equivalent Circuit
Collector
Base
≈ 5 kΩ
≈ 150 Ω
Emitter
1 2006-11-21
2SB1020A
IC – VBE
−7
Common emitter
−6 VCE = −3 V
−5
−4
Tc = 100°C 25
−50
−3
−2
−1
0
0 −0.4 −0.8 −1.2 −1.6 −2.0 −2.4 −2.8 −3.2
Base-emitter voltage VBE (V)
rth – tw
100
Curves should be applied in thermal limited area.
30 (single nonrepetitive pulse)
(1) Infinite heat sink
(2) No heat sink
10
3
1
0.3
0.1
0.001
0.01
0.1 1
Pulse width tw (s)
10
Safe Operating Area
−20
IC max (pulsed)*
−10
1 ms*
−5
IC max
(continuous)
−3
10 ms*
100 ms*
100 μs*
−1
DC operation
Tc = 25°C
−0.5
−0.3
−0.1
−0.05
−0.03
*: Single nonrepetitive pulse
Tc = 25°C
Curves must be derated linearly
with increase in temperature.
−3 −10 −30
VCEO max
−100
−300
Collector-emitter voltage VCE (V)
(2)
(1)
100 1000
4 2006-11-21
4페이지 | |||
구 성 | 총 5 페이지수 | ||
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
B1020 | PNP Transistor - 2SB1020 | JMnic |
B1020A | PNP Transistor - 2SB1020A | Toshiba Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |