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PDF FHC40LG Data sheet ( Hoja de datos )
| Número de pieza | FHC40LG | |
| Descripción | Super Low Noise HEMT | |
| Fabricantes | Eudyna Devices | |
| Logotipo |  |
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FEATURES
• Low Noise Figure: 0.3dB (Typ.)@f=4GHz
• High Associated Gain: 15.5dB (Typ.)@f=4GHz
• Lg ≤ 0.15µm, Wg = 280µm
• Gold Gate Metallization for High Reliability
• Cost Effective Ceramic Microstrip (SMT) Package
• Tape and Reel Available
DESCRIPTION
The FH40LG is a Super High Electron Mobility Transistor
(SuperHEMTTM) intended for general purpose, ultra-low noise and
high gain amplifiers in the 2-12GHz frequency range. This device is
www.DataSheept4aUc.ckoamged in a cost effective, low parasitic, hermetically sealed
metal-ceramic package for high volume telecommunication, DBS,
TVRO, VSAT or other low noise applications.
FHC40LG
Super Low Noise HEMT
Fujitsu’s stringent Quality Assurance Program assures the highest
reliability and consistent performance.
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)
Item
Symbol
Condition
Rating
Drain-Source Voltage
VDS
3.5
Gate-Source Voltage
VGS
-3.0
Total Power Dissipation
Ptot Note
290
Storage Temperature
Tstg
-65 to +175
Channel Temperature
Tch
175
Note: Mounted on Al2O3 board (30 x 30 x 0.65mm)
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 2 volts.
2. The forward and reverse gate currents should not exceed 0.2 and -0.075 mA respectively with
gate resistance of 4000Ω.
3. The operating channel temperature (Tch) should not exceed 80°C.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)
Item
Symbol
Condition
Limit
Min. Typ. Max.
Saturated Drain Current
Transconductance
IDSS VDS = 2V, VGS = 0V
10 40 85
gm VDS = 2V, IDS =10mA 45 65
-
Pinch-off Voltage
Vp VDS = 2V, IDS =1mA -0.1 -1.0 -2.0
Gate Source Breakdown Voltage VGSO IGS = -10µA
-3.0 -
-
Noise Figure
Associated Gain
Thermal Resistance
NF VDS = 2V, IDS = 10mA, - 0.30 0.40
Gas f = 4GHz
14.0 15.5 -
Rth Channel to Case
- 220 300
AVAILABLE CASE STYLES: LG
Note: RF parameters for LG devices are measured on a sample basis as follows:
Lot qty.
1200 or less
1201 to 3200
3201 to 10000
10001 or over
Sample qty.
125
200
315
500
Accept/Reject
(0,1)
(0,1)
(1,2)
(1,2)
Edition 1.1
July 1999
1
Unit
V
V
mW
°C
°C
Unit
mA
mS
V
V
dB
dB
°C/W
1 page  
www.DataSheet4U.com
FHC40LG
Super Low Noise HEMT
Case Style "LG"
Metal-Ceramic Hermetic Package
4.78±0.5
1.5±0.3 1.78±0.15 1.5±0.3
(0.059) (0.07) (0.059)
1
42
3
0.5
(0.02)
1. Gate
2. Source
3. Drain
4. Source
Unit: mm(inches)
For further information please contact:
FUJITSU COMPOUND SEMICONDUCTOR, INC.
2355 Zanker Rd.
San Jose, CA 95131-1138, U.S.A.
Phone: (408) 232-9500
FAX: (408) 428-9111
www.fcsi.fujitsu.com
FUJITSU MICROELECTRONICS, LTD.
Compound Semiconductor Division
Network House
Norreys Drive
Maidenhead, Berkshire SL6 4FJ
Phone:+44 (0)1628 504800
FAX:+44 (0)1628 504888
CAUTION
Fujitsu Compound Semiconductor Products contain gallium arsenide
(GaAs) which can be hazardous to the human body and the environment.
For safety, observe the following procedures:
• Do not put these products into the mouth.
• Do not alter the form of this product into a gas, powder, or liquid
through burning, crushing, or chemical processing as these by-products
are dangerous to the human body if inhaled, ingested, or swallowed.
• Observe government laws and company regulations when discarding this
product. This product must be discarded in accordance with methods
specified by applicable hazardous waste procedures.
Fujitsu Limited reserves the right to change products and specifications without notice.
The information does not convey any license under rights of Fujitsu Limited or others.
© 1998 FUJITSU COMPOUND SEMICONDUCTOR, INC.
Printed in U.S.A. FCSI0598M200
SuperHEMTTM is a trademark of Fujitsu Limited.
5
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| PDF Descargar | [ Datasheet FHC40LG.PDF ] | |
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