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부품번호 | GF4410 기능 |
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기능 | N-channel Enhancement-mode MOSFET | ||
제조업체 | General Semiconductor | ||
로고 | |||
전체 5 페이지수
GF4410
N-Channel Enhancement-Mode MOSFET
TGREENNCFHET®
SO-8
VDS 30V RDS(ON) 13.5mΩ ID 10A
0.197 (5.00)
0.189 (4.80)
www.DataSheet4U.com
8
1
0.050 (1.27)
5
0.157 (3.99)
0.150 (3.81)
0.244 (6.20)
0.228 (5.79)
4
Dimensions in inches
and (millimeters)
0.020 (0.51)
0.013 (0.33)
0.019
0.010
(0.48)
(0.25)
x
45
°
0.009 (0.23)
0.007 (0.18)
0.009 (0.23)
0.004 (0.10)
0.069 (1.75)
0.053 (1.35)
0°– 8°
0.050(1.27)
0.016 (0.41)
0.245 (6.22)
Min.
0.05 (1.27)
0.04 (1.02)
0.165 (4.19)
0.155 (3.94)
0.035 (0.889)
0.025 (0.635)
0.050 typ.
(1.27)
Mounting Pad Layout
Mechanical Data
Case: SO-8 molded plastic body
Terminals: Leads solderable per MIL-STD-750,
Method 2026
High temperature soldering guaranteed:
250°C/10 seconds at terminals
Mounting Position: Any Weight: 0.5g
Features
• Advanced Trench Process Technology
• High Density Cell Design for Ultra Low
On-Resistance
• Specially Designed for Low Voltage DC/DC
Converters
• Fast Switching for High Efficiency
Maximum Ratings and Thermal Characteristics (TA = 25°C unless otherwise noted)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
VDS
30
VGS ±20
Continuous Drain Current
TJ = 150°C(1)
TA = 25°C
TA = 70°C
ID
10
8
Pulsed Drain Current
Continuous Source Current (Diode Conduction)(1)
IDM
IS
50
2.3
Maximum Power Dissipation
TA = 25°C
TA = 70°C
PD
2.5
1.6
Operating Junction and Storage Temperature Range
Maximum Junction-to-Ambient Thermal Resistance(1)
TJ, Tstg
RθJA
–55 to 150
50
Notes: (1) Surface Mounted on FR4 Board, t ≤ 10 sec.
Unit
V
A
W
°C
°C/W
7/10/01
GF4410
N-Channel Enhancement-Mode MOSFET
Ratings and
Characteristic Curves (TA = 25°C unless otherwise noted)
0.035
0.03
0.025
www.DataSheet4U.c0o.0m2
0.015
0.01
0.005
0
2
3000
2500
2000
1500
1000
500
0
0
Fig. 6 – On-Resistance
vs. Gate-to-Source Voltage
ID = 10A
TJ = 125°C
25°C
468
VGS -- Gate-to-Source Voltage (V)
10
Fig. 8 – Capacitance
f = 1MHz
VGS = 0V
Ciss
Coss
Crss
5 10 15 20 25
VDS -- Drain-to-Source Voltage (V)
Fig. 7 – Gate Charge
10
VDS = 15V
ID = 10A
8
6
4
2
0
0 10 20 30 40 3405
Qg -- Gate Charge (nC)
Fig. 9 – Source-Drain Diode
Forward Voltage
100
VGS = 0V
10
TJ = 125°C
1
25°C
--55°C
0.1
0.01
0
0.2 0.4 0.6 0.8
1
VSD -- Source-to-Drain Voltage (V)
1.2
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부품번호 | 상세설명 및 기능 | 제조사 |
GF4410 | N-channel Enhancement-mode MOSFET | General Semiconductor |
GF4412 | N-channel Enhancement-mode MOSFET | General Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |