Datasheet.kr   

FB10R06KL4GB1 데이터시트 PDF




eupec GmbH에서 제조한 전자 부품 FB10R06KL4GB1은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


PDF 형식의 FB10R06KL4GB1 자료 제공

부품번호 FB10R06KL4GB1 기능
기능 IGBT-Modules
제조업체 eupec GmbH
로고 eupec GmbH 로고


FB10R06KL4GB1 데이터시트 를 다운로드하여 반도체의 전기적 특성과 매개변수에 대해 알아보세요.




전체 13 페이지수

미리보기를 사용할 수 없습니다

FB10R06KL4GB1 데이터시트, 핀배열, 회로
Technische Information / technical information
IGBT-Module
IGBT-Modules
FB10R06KL4GB1
Elektrische Eigenschaften /electrical properties
Höchstzulässige Werte /maximum rated values
Vorläufig
preliminary
Diode Gleichrichter / diode rectifier
Periodische Rückw. Spitzensperrspannung
repetitive peak reverse voltage
Tvj =25°C
VRRM
800
Durchlaßstrom Grenzeffektivwert pro Chip
RMS forward current per chip
www.DataSheet4U.com
Gleichrichter Ausgang Grenzeffektivstrom
maximum RMS current at Rectifier output
Stoßstrom Grenzwert
surge forward current
Grenzlastintegral
I2t - value
TC =80°C
TC =80°C
tP = 10 ms,
tP = 10 ms,
tP = 10 ms,
tP = 10 ms,
Tvj = 25°C
Tvj = 150°C
Tvj = 25°C
Tvj = 150°C
Transistor Wechselrichter / transistor inverter
Kollektor-Emitter-Sperrspannung
collector-emitter voltage
Tvj =25°C
Kollektor-Dauergleichstrom
DC-collector current
TC =80°C
TC = 25 °C
Periodischer Kollektor Spitzenstrom
repetitive peak collector current
tP = 1 ms,
TC =80°C
Gesamt-Verlustleistung
total power dissipation
TC = 25°C
Gate-Emitter-Spitzenspannung
gate-emitter peak voltage
IFRMSM
IRMSmax
IFSM
I2t
VCES
IC,nom.
IC
ICRM
Ptot
VGES
23
25
197
158
194
125
600
10
15
20
55
+/- 20V
Diode Wechselrichter / diode inverter
Dauergleichstrom
DC forward current
Periodischer Spitzenstrom
repetitive peak forw. current
Grenzlastintegral
I2t - value
tP = 1 ms
VR = 0V, tp = 10ms, Tvj = 125°C
IF 10
IFRM
20
I2t 12
Transistor Brems-Chopper / transistor brake-chopper
Kollektor-Emitter-Sperrspannung
collector-emitter voltage
Tvj =25°C
Kollektor-Dauergleichstrom
DC-collector current
Periodischer Kollektor Spitzenstrom
repetitive peak collector current
TC =80 °C
TC = 25 °C
tP = 1 ms, Tc=80°C
Gesamt-Verlustleistung
total power dissipation
TC = 25°C
Gate-Emitter-Spitzenspannung
gate-emitter peak voltage
VCES
IC,nom.
IC
ICRM
Ptot
VGES
600
10
15
20
55
+/- 20V
Diode Brems-Chopper / diode brake-chopper
Dauergleichstrom
DC forward current
Periodischer Spitzenstrom
repetitive peak forw. current
tP = 1 ms
IF
IFRM
10
20
prepared by: Thomas Passe
approved by: R. Keggenhoff
date of publication: 2003-03-26
revision: 2.1
V
A
A
A
A
A2s
A2s
V
A
A
A
W
V
A
A
A2s
V
A
A
A
W
V
A
A
1(12)




FB10R06KL4GB1 pdf, 반도체, 판매, 대치품
Technische Information / technical information
IGBT-Module
IGBT-Modules
FB10R06KL4GB1
Thermische Eigenschaften / thermal properties
Vorläufig
preliminary
min. typ. max.
Innerer Wärmewiderstand
thermal resistance, junction to heatsink
Gleichr. Diode/ rectif. diode
λPaste=1W/m*K
RthJH
-
2,6
- K/W
Trans. Wechselr./ trans. inverter λgrease=1W/m*K
- 2,8 - K/W
Diode Wechselr./ diode inverter
- 4,3 - K/W
www.DataSheet4U.com
Trans. Bremse/ trans. brake
- 2,8 - K/W
Innerer Wärmewiderstand
thermal resistance, junction to case
Diode Bremse/ diode brake
Gleichr. Diode/ rectif. diode
Trans. Wechselr./ trans.inverter
RthJC
-
-
-
4,3 - K/W
- 2,4 K/W
- 2,2 K/W
Übergangs-Wärmewiderstand
thermal resistance, case to heatsink
Höchstzulässige Sperrschichttemperatur
maximum junction temperature
Betriebstemperatur
operation temperature
Lagertemperatur
storage temperature
Diode Wechselr./ diode inverter
Trans. Bremse/ trans. brake
Diode Bremse/ diode brake
Gleichr. Diode/ rectif. diode
λPaste=1W/m*K
Trans. Wechselr./ trans. inverter λgrease=1W/m*K
Diode Wechselr./ diode inverter
Trans. Bremse/ trans. brake
Diode Bremse/ diode brake
RthCH
Tvj
-
-
-
-
-
-
-
-
-
- 3,1 K/W
- 2,2 K/W
- 3,1 K/W
0,4 - K/W
0,8 - K/W
1,5 - K/W
0,8 - K/W
1,5 - K/W
- 150 °C
Top -40 - 125 °C
Tstg -40 - 125 °C
Mechanische Eigenschaften / mechanical properties
Innere Isolation
internal insulation
CTI
comperative tracking index
Anpreßkraft f. mech. Befestigung pro Feder
mounting force per clamp
Gewicht
weight
Kontakt - Kühlkörper
terminal to heatsink
Terminal - Terminal
terminal to terminal
Kriechstrecke
creepage distance
Luftstrecke
clearance distance
Kriechstrecke
creepage distance
Luftstrecke
clearance distance
Al2O3
225
F
40...80
N
G 36 g
13,5
mm
12 mm
7,5 mm
7,5 mm
4(12)

4페이지










FB10R06KL4GB1 전자부품, 판매, 대치품
Technische Information / technical information
IGBT-Module
IGBT-Modules
FB10R06KL4GB1
Vorläufig
preliminary
Schaltverluste Wechselr. (typisch) Eon = f (IC), Eoff = f (IC), Erec = f (IC) VCC =
switching losses inverter (typical) Tj = 125°C,
VGE = ±15 V,
RGon = RGoff =
300 V
82 Ohm
1,6
www.DataSheet4U.com
1,4
1,2
Eon
Eoff
Erec
1
0,8
0,6
0,4
0,2
0
0 2 4 6 8 10 12 14 16 18 20
IC [A]
Schaltverluste Wechselr. (typisch)
switching losses inverter (typical)
1,6
Eon = f (RG), Eoff = f (RG), Erec = f (RG)
Tj = 125°C, VGE = +-15 V , Ic = Inenn , VCC =
1,4 Eon
Eoff
Erec
1,2
1
0,8
0,6
0,4
0,2
0
80 100 120 140 160 180
RG []
300 V
200
7(12)

7페이지


구       성 총 13 페이지수
다운로드[ FB10R06KL4GB1.PDF 데이터시트 ]

당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는

포괄적인 데이터시트를 제공합니다.


구매 문의
일반 IC 문의 : 샘플 및 소량 구매
-----------------------------------------------------------------------

IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한
광범위한 전력 반도체를 판매합니다.

전력 반도체 전문업체

상호 : 아이지 인터내셔날

사이트 방문 :     [ 홈페이지 ]     [ 블로그 1 ]     [ 블로그 2 ]



관련 데이터시트

부품번호상세설명 및 기능제조사
FB10R06KL4GB1

IGBT-Modules

eupec GmbH
eupec GmbH

DataSheet.kr       |      2020   |     연락처      |     링크모음      |      검색     |      사이트맵