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FGA15N120AN 데이터시트 PDF




Fairchild Semiconductor에서 제조한 전자 부품 FGA15N120AN은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


PDF 형식의 FGA15N120AN 자료 제공

부품번호 FGA15N120AN 기능
기능 NPT Igbt
제조업체 Fairchild Semiconductor
로고 Fairchild Semiconductor 로고


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FGA15N120AN 데이터시트, 핀배열, 회로
FGA15N120AN
IGBT
General Description
Employing NPT technology, Fairchild’s AN series of IGBTs
provides low conduction and switching losses. The AN
series offers solutions for applications such as induction
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heating (IH), motor control, general purpose
uninterruptible power supplies (UPS).
inverters
and
Features
• High speed switching
• Low saturation voltage : VCE(sat) = 2.4 V @ IC = 15A
• High input impedance
Applications
Induction Heating, UPS, AC & DC motor controls and general purpose inverters.
C
GC E
TO-3P
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VCES
VGES
IC
ICM (1)
PD
TJ
Tstg
TL
Description
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
@ TC = 25°C
@ TC = 100°C
@ TC = 25°C
@ TC = 100°C
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
RθJC(IGBT)
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
G
E
FGA15N120AN
1200
± 20
24
15
45
200
80
-55 to +150
-55 to +150
300
Typ.
--
--
Max.
0.63
40
Units
V
V
A
A
A
W
W
°C
°C
°C
Units
°C/W
°C/W
©2003 Fairchild Semiconductor Corporation
FGA15N120AN Rev. A




FGA15N120AN pdf, 반도체, 판매, 대치품
2500
2000
1500
Ciss
Common Emitter
V = 0V, f = 1MHz
GE
T = 25
C
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1000
500
Coss
Crss
0
1 10
Collector-Emitter Voltage, VCE [V]
Fig 7. Capacitance Characteristics
1000
Common Emitter
V = 600V, V = ± 15V
CC GE
I = 15A
C
T = 25
C
T = 125
C
100
td(off)
tf
10
0
10 20 30 40 50 60 70
Gate Resistance, RG []
Fig 9. Turn-Off Characteristics vs.
Gate Resistance
Common Emitter
V =±
GE
15V,
R
G
=
20
T = 25
C
T = 125
C
100
td(on)
tr
5 10 15 20 25
Collector Current, IC [A]
Fig 11. Turn-On Characteristics vs.
Collector Current
©2003 Fairchild Semiconductor Corporation
30
100 td(on)
tr
10
0
Common Emitter
V = 600V, V = ± 15V
CC GE
I = 15A
C
T = 25
C
T = 125
C
10 20 30 40 50 60 70
Gate Resistance, RG []
Fig 8. Turn-On Characteristics vs. Gate
Resistance
Common Emitter
V = 600V, V = ± 15V
10
CC
I = 15A
GE
C
T = 25
C
T = 125
C
1
Eon
Eoff
0 10 20 30 40 50 60 70
Gate Resistance, RG []
Fig 10. Switching Loss vs. Gate Resistance
1000
Common Emitter
V =±
GE
15V,
R
G
=
20
T = 25
C
T = 125
C
100
td(off)
tf
5 10 15 20 25 30
Collector Current, IC [A]
Fig 12. Turn-Off Characteristics vs.
Collector Current
FGA15N120AN Rev. A

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FGA15N120AN 전자부품, 판매, 대치품
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
ACEx™
ActiveArray™
FACT Quiet Series™
FAST®
Bottomless™ FASTr™
CoolFET™
FRFET™
CROSSVOLT™ GlobalOptoisolator™
DOME™
GTO™
EcoSPARK™ HiSeC™
E2CMOS™
I2C™
EnSigna™
ImpliedDisconnect™
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ISOPLANAR™
Across the board. Around the world.™
The Power Franchise™
Programmable Active Droop™
LittleFET™
MICROCOUPLER™
MicroFET™
MicroPak™
MICROWIRE™
MSX™
MSXPro™
OCX™
OCXPro™
OPTOLOGIC®
OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerTrench®
QFET®
QS™
QT Optoelectronics™
Quiet Series™
RapidConfigure™
RapidConnect™
SILENT SWITCHER®
SMART START™
SPM™
Stealth™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic®
TINYOPTO™
TruTranslation™
UHC™
UltraFET®
VCX™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems 2. A critical component is any component of a life support
which, (a) are intended for surgical implant into the body, device or system whose failure to perform can be
or (b) support or sustain life, or (c) whose failure to perform reasonably expected to cause the failure of the life support
when properly used in accordance with instructions for use device or system, or to affect its safety or effectiveness.
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or In
Design
Preliminary
First Production
No Identification Needed
Full Production
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2003 Fairchild Semiconductor Corporation
Rev. I5

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관련 데이터시트

부품번호상세설명 및 기능제조사
FGA15N120AN

NPT Igbt

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FGA15N120AND

IGBT ( Insulated Gate Bipolar Transistor )

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