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PDF FGA15N120FTD Data sheet ( Hoja de datos )
| Número de pieza | FGA15N120FTD | |
| Descripción | 15A Field Stop Trench IGBT | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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March 2013
FGA15N120FTD
1200 V, 15 A Field Stop Trench IGBT
Features
• Field Stop Trench Technology
• High Speed Switching
• Low Saturation Voltage: VCE(sat) = 1.58 V @ IC = 15 A
• High Input Impedance
• RoHS Complaint
Applications
• Induction Heating, Microwave Oven
General Description
Using advanced field stop trench technology, Fairchild®’s
1200V trench IGBTs offer superior conduction and switching
performances for soft switching applications. The device can
operate in parallel configuration with exceptional avalanche rug-
gedness. This device is designed for induction heating and
microwave oven.
C
GCE
TO-3PN
Absolute Maximum Ratings
Symbol
Description
VCES
VGES
IC
ICM (1)
IF
IFM
PD
TJ
Tstg
TL
Collector to Emitter Voltage
Gate to Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
@ TC = 25oC
@ TC = 100oC
Diode Continuous Forward Current
@ TC = 100oC
Diode Maximum Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
@ TC = 25oC
@ TC = 100oC
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Notes:
1: Repetitive rating: Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
RJC(IGBT)
RJC(Diode)
RJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
©2008 Fairchild Semiconductor Corporation
FGA15N120FTD Rev. C0
1
G
E
Ratings
1200
25
30
15
45
15
90
220
88
-55 to +150
-55 to +150
300
Unit
V
V
A
A
A
A
A
W
W
oC
oC
oC
Typ.
-
-
-
Max.
0.57
2.1
62.5
Unit
oC/W
oC/W
oC/W
www.fairchildsemi.com
1 page  
Typical Performance Characteristics
Figure 7. Saturation Voltage vs. VGE
20
Common Emitter
TC = 125oC
16
12
8
4
15A
30A
IC = 10A
0
0 4 8 12 16 20
Gate-Emitter Voltage, VGE [V]
Figure 9. Gate charge Characteristics
15
Common Emitter
TC = 25oC
VCC = 200V
400V
10
600V
5
0
0 30 60 90 120
Gate Charge, Qg [nC]
Figure 11. Turn-on Characteristics vs.
Gate Resistance
300
100
tr
10
0
td(on)
Common Emitter
VCC = 600V, VGE = 15V
IC = 15A
TC = 25oC
TC = 125oC
20 40 60 80
Gate Resistance, RG []
100
Figure 8. Capacitance Characteristics
4000
3000
Common Emitter
VGE = 0V, f = 1MHz
Cies TC = 25oC
2000
1000
Coes
Cres
0
1 10
Collector-Emitter Voltage, VCE [V]
30
Figure 10. SOA Characteristics
200
100 IC MAX (Pulse)
10s
10 100s
1ms
10ms
IC MAX (Continuous)
1
DC Operation
*Notes:
0.1 1. TC = 25oC
2. TJ = 150oC
3. Single Pulse
0.01
1
10 100 1000 2000
Collector-Emitter Voltage, VCE [V]
Figure 12. Turn-off Characteristics vs.
Gate Resistance
2000
1000
Common Emitter
VCC = 600V, VGE = 15V
IC = 15A
TC = 25oC
TC = 125oC
td(off)
tf
100
70
0
20 40 60 80
Gate Resistance, RG []
100
©2008 Fairchild Semiconductor Corporation
FGA15N120FTD Rev. C0
5
www.fairchildsemi.com
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet FGA15N120FTD.PDF ] | |
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