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PDF SMP80MC Data sheet ( Hoja de datos )

Número de pieza SMP80MC
Descripción TRISIL
Fabricantes STMicroelectronics 
Logotipo STMicroelectronics Logotipo



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SMP80MC
TRISIL™ for telecom equipment protection
Features
Bidirectional crowbar protection
www.DataSheet4U.comVoltage: range from 120 V to 320 V
Low VBO / VR ratio
Micro capacitance equal to 12 pF @ 50 V
Low leakage current : IR = 2 µA max
Holding current: IH = 150 mA min
Repetitive peak pulse current :
IPP = 80 A (10/1000 µs)
Main applications
Any sensitive equipment requiring protection
against lightning strikes and power crossing:
Terminals (phone, fax, modem...) and central
office equipment
Description
The SMP80MC is a series of micro capacitance
transient surge arrestors designed for the
protection of high debit rate communication
equipment on CPE side. Its micro capacitance
avoids any distortion of the signal and is
compatible with digital transmission like ADSL2
and ADSL2+.
Benefits
Trisils are not subject to ageing and provide a fail
safe mode in short circuit for a better protection.
They are used to help equipment to meet main
standards such as UL1950, IEC950 / CSA C22.2
and UL1459. They have UL94 V0 approved resin.
SMB package is JEDEC registered (DO-214AA).
Trisils comply with the following standards GR-
1089 Core, ITU-T-K20/K21, VDE0433, VDE0878,
IEC61000-4-5 and FCC part 68.
TM: TRISIL is a trademark of STMicroelectronics.
SMB
(JEDEC DO-214AA)
Order codes
Part Number
SMP80MC-120
SMP80MC-140
SMP80MC-160
SMP80MC-200
SMP80MC-230
SMP80MC-270
SMP80MC-320
Schematic diagram
Marking
TP12
TP14
TP16
TP20
TP23
TP27
TP32
January 2007
Rev 4
1/10
www.st.com
10

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SMP80MC pdf
SMP80MC
Characteristics
Figure 7.
Variation of thermal impedance Figure 8.
junction to ambient versus pulse
duration (Printed circuit board FR4,
SCu=35µm, recommended pad
layout)
Relative variation of junction
capacitance versus reverse voltage
applied (typical values)
Zth(j-a)/Rth(j-a)
1.0
0.9
0.8
0.7
0.6
www.DataSheet4U.com0.5
0.4
0.3
0.2
0.1
0.0
1.E-02
1.E-01
tp(s)
1.E+00
1.E+01
1.E+02
1.E+03
C [VR] / C [VR=2V]
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
1
10
VR(V)
100
F =1MHz
VOSC = 1VRMS
Tj = 25°C
1000
Figure 9.
Test circuit 1 for dynamic IBO and VBO parameters
100 V / µs, di /dt < 10 A / µs, Ipp = 80 A
2Ω
U 10 µF
45 Ω
66 Ω 470 Ω
83 Ω
0.36 nF
46 µH
KeyTek 'System 2' generator with PN246I module
1 kV / µs, di /dt < 10 A / µs, Ipp = 10 A
26 µH
250 Ω
47 Ω
46 µH
U 60 µF 12 Ω
KeyTek 'System 2' generator with PN246I module
5/10

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