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부품번호 | FBR1510W 기능 |
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기능 | (FBR1500W - FBR1510W) FAST RECOVERY BRIDGE RECTIFIERS | ||
제조업체 | EIC discrete Semiconductors | ||
로고 | |||
FBR1500W - FBR1510W
PRV : 50 - 1000 Volts
Io : 15 Amperes
FAST RECOVERY
BRIDGE RECTIFIERS
BR50W
FEATURES :
* High case dielectric strength
* High surge current capability
www.Data*ShHeeigt4hU.rceomliability
* Low reverse current
* Low forward voltage drop
* Fast switching for high efficiency
* Ideal for printed circuit board
* Pb / RoHS Free
MECHANICAL DATA :
* Case : Molded plastic with heatsink integrally
mounted in the bridge encapsulation
* Epoxy : UL94V-O rate flame retardant
* Terminals : Plated lead solderable per
MIL-STD-202, Method 208 guaranteed
* Polarity : Polarity symbols marked on case
* Mounting position : Bolt down on heat-sink
with silicone thermal compound between
bridge and mounting surface for maximum
heat transfer efficiency
* Weight : 15.95 grams
0.732 (18.6)
0.692 (17.5)
1.130 (28.7)
1.120 (28.4)
0.470 (11.9)
0.430 (10.9)
0.21 (5.3)
0.20 (5.1)
0.042 (1.06)
0.038 (0.96)
0.310 (7.87)
0.280(7.11)
1.2 (30.5)
MIN.
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Current Tc = 55 °C
Peak Forward Surge Current Single half sine wave
Superimposed on rated load (JEDEC Method)
Current Squared Time at t < 8.3 ms.
Maximum Forward Voltage drop per Diode at IF = 7.5 A
Maximum DC Reverse Current
Ta = 25 °C
at Rated DC Blocking Voltage
Ta = 100 °C
Maximum Reverse Recovery Time (Note 1)
Typical Thermal Resistance per diode (Note 2)
Operating Junction Temperature Range
Storage Temperature Range
SYMBOL
FBR
1500W
VRRM
50
VRMS
35
VDC 50
IF(AV)
FBR
1501W
100
70
100
FBR
1502W
200
140
200
FBR
1504W
400
280
400
15
FBR
1506W
600
420
600
FBR
1508W
800
560
800
FBR
1510W
UNIT
1000 V
700 V
1000 V
A
IFSM 300 A
I2t
VF
IR
IR(H)
Trr
RθJC
TJ
TSTG
375
1.3
10
200
150 250
1.9
- 50 to + 150
- 50 to + 150
A2S
V
µA
µA
500 ns
°C/W
°C
°C
Notes :
1 ) Measured with IF = 0.5 Amp., IR = 1 Amp., Irr = 0.25 Amp.
2 ) Thermal Resistance from junction to case with units mounted on a 3.2" x 3.2" x 0.12" THK (8.2cm.x 8.2cm.x 0.3cm.) Al. Plate. heatsink.
Page 1 of 2
Rev. 02 : March 24, 2005
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구 성 | 총 2 페이지수 | ||
다운로드 | [ FBR1510W.PDF 데이터시트 ] |
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
FBR1510 | FAST RECOVERY BRIDGE RECTIFIERS | EIC discrete Semiconductors |
FBR1510W | (FBR1500W - FBR1510W) FAST RECOVERY BRIDGE RECTIFIERS | EIC discrete Semiconductors |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |