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Datasheet C60R120P Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | C60R120P | Microwave Carbon Rod Resistors __ Microwave Carbon Rod Resistors
_ MECHANICAL SPECIFICATIONS
Substrate: Alumina or Beryllium Oxide Ceramic (Note: Letter "P" Denotes Beryllium Oxide.)
Std. Tolerance: Standard Resistance Tolerance ± 2% at 25°C Terminals:
Terminal Areas are Nickel/Tin Plated which reduces oxi |  Component General | data |
C60 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | C6000 | NPN Transistor, 2SC6000 TOSHIBA Transistor Silicon NPN Epitaxial Type
2SC6000
High Speed Switching Applications DC-DC Converter Applications
2SC6000
Unit: mm
• High DC current gain: hFE = 250 to 400 (IC = 2.5 A) • Low collector-emitter saturation: VCE (sat) = 0.18 V (max) • High speed switching: tf = 13 ns (typ)
A  Toshiba Semiconductor data | | |
| 2 | C6010 | NPN Transistor, 2SC6010 TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SC6010
High Voltage Switching Applications Switching Regulator Applications DC-DC Converter Applications
2SC6010
Unit: mm
• High speed switching: tf = 0.24μs (max) (IC = 0.3A)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
R  Toshiba data | | |
| 3 | C6011 | NPN Transistor, 2SC6011 2SC6011 Audio Amplification Transistor
Features and Benefits
▪ Small package (TO-3P) ▪ High power handling capacity, 160 W ▪ Improved sound output by reduced on-chip impedance ▪ For professional audio (PA) applications, VCEO = 200 V
versions available ▪ Complementary to 2SA2151 ▪ Recomm  Allegro data | | |
| 4 | C6012 | NPN Transistor, 2SC6012 Power Transistors
2SC6012
Silicon NPN triple diffusion mesa type
For horizontal deflection output
15.5±0.5
(10.0)
Unit: mm
φ 3.2±0.1 5˚
(4.5)
3.0±0.3 5˚
■ Features
• High breakdown voltage, and high reliability through the use of a glass passivation layer • High-speed switching • W  Panasonic Semiconductor data | | |
| 5 | C6017 | NPN Transistor, 2SC6017
Ordering number : ENN8275
2SA2169 / 2SC6017
PNP / NPN Epitaxial Planar Silicon Transistors
2SA2169 / 2SC6017
Applications
•
High-Current Switching Applications
Relay drivers, lamp drivers, motor drivers.
Features
• • • •
Adoption of MBIT process. Large current ca  Sanyo Semicon Device data | | |
| 6 | C6019 | NPN Transistor, 2SC6019
Ordering number : ENN8342
2SC6019
2SC6019
Applications
•
NPN Epitaxial Planar Silicon Transistor
DC / DC Converter Applications
Relay drivers, lamp drivers, motor drivers, flash.
Features
• • • • • •
Adoption of FBET and MBIT processes. Large current capacita Sanyo Semicon Device data | | |
| 7 | C6040 | NPN Transistor, 2SC6040
TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SC6040
High-Speed and High-Voltage Switching Applications Switching Regulator Applications DC-DC Converter Applications
2SC6040
Unit: mm
• High-speed switching: tf = 0.2 µs (max) (IC = 0.3 A) • High breakdown voltage: VC Toshiba Semiconductor data | |
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