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FQPF3N80C 데이터시트 PDF




Fairchild Semiconductor에서 제조한 전자 부품 FQPF3N80C은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


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부품번호 FQPF3N80C 기능
기능 800V N-Channel MOSFET
제조업체 Fairchild Semiconductor
로고 Fairchild Semiconductor 로고


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FQPF3N80C 데이터시트, 핀배열, 회로
FQP3N80C / FQPF3N80C
N-Channel QFET® MOSFET
800 V, 3.0 A, 4.8
Features
• 3.0 A, 800 V, RDS(on) = 4.8 (Max.) @ VGS = 10 V,
ID = 1.5 A
• Low Gate Charge (Typ. 13 nC)
• Low Crss (Typ. 5.5 pF)
• 100% Avalanche Tested
June 2014
Description
This N-Channel enhancement mode power MOSFET is pro-
duced using Fairchild Semiconductor’s proprietary planar stripe
and DMOS technology. This advanced MOSFET technology
has been especially tailored to reduce on-state resistance, and
to provide superior switching performance and high avalanche
energy strength. These devices are suitable for switched mode
power supplies, active power factor correction (PFC), and elec-
tronic lamp ballasts.
D
GDS
TO-220
GDS TO-220F
G
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted.
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
Parameter
Drain to Source Voltage
Drain Current
Drain Current
-Continuous (TC = 25oC)
-Continuous (TC = 100oC)
- Pulsed
Gate to Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate above 25oC
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering,
1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature.
Thermal Characteristics
Symbol
RJC
RJA
Parameter
Thermal Resistance, Junction to Case, Max
Thermal Resistance, Junction to Ambient, Max
FQP3N80C
FQPF3N80C
800
3 3*
1.9 1.9 *
12 12 *
30
320
3
10.7
4.5
107 39
0.85 0.31
-55 to +150
300
FQP3N80C
1.17
62.5
FQPF3N80C
3.2
62.5
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Unit
°C/W
°C/W
©2003 Fairchild Semiconductor Corporation
FQP3N80C / FQPF3N80C Rev. C2
1
www.fairchildsemi.com




FQPF3N80C pdf, 반도체, 판매, 대치품
Typical Characteristics (Continued)
1.2
1.1
1.0
0.9 Notes:
1.
2.
VIDG=S =2500Vμ
A
0.8
-100
-50 0
50 100 150
TJ, JunctionTemperature[oC]
200
Figure 7. Breakdown Voltage Variation
vs Temperature
Operation in This Area
is Limited by R DS(on)
101 100 s
1 ms
10 ms
100 ms
100 DC
10-1
10-2
100
Notes :
1. TC = 25 oC
2.
3.
TSJin=gl1e5P0uoClse
101 102
VDS, Drain-Source Voltage [V]
103
Figure 9-1. Maximum Safe Operating Area
for FQP3N80C
4
3
2
1
0
25 50 75 100 125 150
TC, Case Temperature []
Figure 10. Maximum Drain Current
vs Case Temperature
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
Notes :
1.
2.
VIDG=S
= 10 V
1.5 A
-50 0 50 100 150
TJ, Junction Temperature [oC]
200
Figure 8. On-Resistance Variation
vs Temperature
Operation in This Area
is Limited by RDS(on)
101 100 s
1 ms
10 ms
100 100 ms
DC
10-1
10-2
100
Notes :
1. TC = 25 oC
2.
3.
TSJin=gl1e5P0uolCse
101 102
VDS, Drain-Source Voltage [V]
103
Figure 9-2. Maximum Safe Operating Area
for FQPF3N80C
©2003 Fairchild Semiconductor Corporation
FQP3N80C / FQPF3N80C Rev. C2
4
www.fairchildsemi.com

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FQPF3N80C 전자부품, 판매, 대치품
Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
I SD
Driver
RG
VGS
+
VDS
_
L
Same Type
as DUT
• dv/dt controlled by RG
• ISD controlled by pulse period
VDD
VGS
( Driver )
I SD
( DUT )
VDS
( DUT )
D = --GG--aa--tt-ee--PP--u-u-ll-ss-ee---WP--e-i-dr-ito-h-d-
10V
IFM , Body Diode Forward Current
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VSD
Body Diode
Forward Voltage Drop
VDD
©2003 Fairchild Semiconductor Corporation
FQP3N80C / FQPF3N80C Rev. C2
7
www.fairchildsemi.com

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