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PDF IKW75N60T Data sheet ( Hoja de datos )

Número de pieza IKW75N60T
Descripción IGBT
Fabricantes Infineon Technologies 
Logotipo Infineon Technologies Logotipo



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IKW75N60T
TRENCHSTOPSeries
q
Low Loss DuoPack : IGBT in TRENCHSTOPand Fieldstop technology with soft,
fast recovery anti-parallel Emitter Controlled HE diode
Very low VCE(sat) 1.5V (typ.)
Maximum Junction Temperature 175°C
Short circuit withstand time 5s
Positive temperature coefficient in VCE(sat)
very tight parameter distribution
high ruggedness, temperature stable behaviour
very high switching speed
Low EMI
Very soft, fast recovery anti-parallel Emitter Controlled HE diode
Qualified according to JEDEC1) for target applications
Pb-free lead plating; RoHS compliant
Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
Applications:
Frequency Converters
Uninterrupted Power Supply
C
G
E
PG-TO247-3
Type
IKW75N60T
VCE
600V
IC
75A
VCE(sat),Tj=25°C
1.5V
Tj,max
175C
Marking
K75T60
Package
PG-TO247-3
Maximum Ratings
Parameter
Collector-emitter voltage, Tj ≥ 25C
DC collector current, limited by Tjmax
TC = 25C
TC = 100C
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area VCE = 600V, Tj = 175C, tp = 1µs
Diode forward current, limited by Tjmax
Diode pulsed current, tp limited by Tjmax
TC = 25C
TC = 100C
Gate-emitter voltage
Short circuit withstand time3)
VGE = 15V, VCC 400V, Tj 150C
Power dissipation TC = 25C
Operating junction temperature
Storage temperature
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
Symbol
VCE
IC
ICpuls
-
IF
IFpuls
VGE
tSC
Ptot
Tj
Tstg
Tsold
Value
600
802)
75
225
225
802)
75
225
20
5
428
-40...+175
-55...+150
260
Unit
V
A
V
s
W
C
1) J-STD-020 and JESD-022
2) Value limited by bondwire
3) Allowed number of short circuits: <1000; time between short circuits: >1s.
IFAG IPC TD VLS
1
Rev. 2.8 2013-12-05

1 page




IKW75N60T pdf
IKW75N60T
TRENCHSTOPSeries
q
120A
VGE=20V
15V
90A 13V
11V
9V
60A
7V
30A
0A
0V 1V 2V 3V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 5. Typical output characteristic
(Tj = 25°C)
120A
VGE=20V
15V
90A 13V
11V
9V
60A
7V
30A
0A
0V 1V 2V 3V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 6. Typical output characteristic
(Tj = 175°C)
80A
60A
40A
20A
TJ=175°C
25°C
0A
0V 2V 4V 6V 8V
VGE, GATE-EMITTER VOLTAGE
Figure 7. Typical transfer characteristic
(VCE=20V)
2.5V
2.0V
1.5V
1.0V
IC=150A
IC=75A
IC=37.5A
0.5V
0.0V
0°C
50°C
100°C
150°C
Figure 8.
TJ, JUNCTION TEMPERATURE
Typical collector-emitter
saturation voltage as a function of
junction temperature
(VGE = 15V)
IFAG IPC TD VLS
5
Rev. 2.8 2013-12-05

5 Page





IKW75N60T arduino
IKW75N60T
TRENCHSTOPSeries
q
IFAG IPC TD VLS
11
Rev. 2.8 2013-12-05

11 Page







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