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AT61162E 데이터시트 PDF




ATMEL Corporation에서 제조한 전자 부품 AT61162E은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


 

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부품번호 AT61162E 기능
기능 Rad Hard 2-Mbit x 8 SRAM Cube
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로고 ATMEL Corporation 로고


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AT61162E 데이터시트, 핀배열, 회로
Features
Orgawnwizwe.dDaatsaS2hMeext48U.bciotms
Single 3.3V Power Supply
Stacks of 16 SRAM 128K x AT65609E Die
Access Time: 40 ns read, 35 ns write
Very Low Power Consumption
– Active: 130 mW (Typ)
– Standby: 1 mW (Typ)
TTL-Compatible Inputs and Outputs
Die Designed on 0.35 Micron Process
No Single Event Latch-up below a LET Threshold of 80 MeV/mg/cm2
Tested up to a Total Dose of 200 krads (Si) according to MIL STD 883 Method 1019
Wide Temperature Range -55°C to +125°C
Built by 3D+ company, using 3D+ Die Stacking Technology and Tested by Atmel
Description
The AT61162E is a Rad Hard module, highly-integrated and very low-power CMOS
static RAM organized as 2M x 8 bits. It is organized with 16 banks of 1 Mbit. Each
bank has a 8-bit interface and is selected with 16 specific CS: 0 - 15. Banks are
selectable by pairs with 8 specific BS: 0 - 7.
This module takes full benefit of the 3D+ cube technology, and it is assembled by 3D+
and tested by Atmel, using Atmel 65609E 1-Mbit SRAM die: it is built with 8 layers,
each one housing 2 dies. 10 nF decoupling capacitors are embedded for each mem-
ory die.
This module brings the solution to applications where fast computing is as mandatory
as low power consumption, for example: space electronics, portable instruments, or
embarked systems.
AT61162E is processed according to the methods of the latest revision of the MIL
PRF 38535, QML N (QML Q counterpart for plastic).
The package is a 64 gull wing pins dual in line, 11 mm wide, 28 mm long and 14.3 mm
height and 0.8 mm pin pitch.
Rad Hard
2-Mbit x 8
SRAM Cube
AT61162E
4157E–AERO–07/05




AT61162E pdf, 반도체, 판매, 대치품
Electrical Characteristics
www.DataSheet4U.com
Absolute Maximum Ratings*
Supply Voltage to GND Potential............................ 0.5 to +5V
DC Input Voltage GND ........................... GND -0.3 to VCC0.3V
DC Output Voltage high-Z-State GND ... GND -0.3 to VCC+0.3V
Storage Temperature ......................................... -65 to +150°C
Output Current into Outputs (Low)................................. 20 mA
Electro Statics Discharge Voltage
(MIL STD 883D method 3015.3).................................. >1000V
*Note:
Stresses beyond those listed under "Absolute Maxi-
mum Ratings” may cause permanent damage to the
device. This is a stress rating only and functional oper-
ation of the device at these or any other conditions
beyond those indicated in the operational sections of
this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may
affect device reliability.
Operating Range
Recommended DC
Operating
Conditions
Military
Parameter
VCC
Gnd
V IH
V IL
Operating Temperature
-55°C to 125°C
Operating Voltage
3.3V ± 0.3V
Description
Supply Voltage
Ground
Input High Voltage
Input Low Voltage
Min
3
0
2.2
GND-0.3
Typ
3.3
0
-
0.0
Max
3.6
0
VCC+0.3
0.8
Units
V
V
V
V
4 AT61162E
4157E–AERO–07/05

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AT61162E 전자부품, 판매, 대치품
AT61162E
AC Parameters
www.DataSheet4U.com
AC Test Conditions
Input Pulse Levels: ....................................................... GND to 3.0V
Input Timing Reference Levels: ................................... 1.5V
Output Loading IOL/IOH (see figures 1a and 1b)............ +30 pF
Rise and Fall times:
Capacities, combined with current levels, impact on rise and fall times.
The following table summarizes capacitance values (in pF), determined at 50.
CSx.x
12
AC Test Loads Waveforms
3.3V
R1 2552
BSx WE / OE / Address Inputs
20 130
Data Inputs / Outputs
160
3.3V
R1 2552
2824
2824
Figure 1a
Figure 1b
Figure 2
1340
4157E–AERO–07/05
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관련 데이터시트

부품번호상세설명 및 기능제조사
AT61162E

Rad Hard 2-Mbit x 8 SRAM Cube

ATMEL Corporation
ATMEL Corporation

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