|
|
PDF 2SK3781-01R Data sheet ( Hoja de datos )
| Número de pieza | 2SK3781-01R | |
| Descripción | N-CHANNEL SILICON POWER MOSFET | |
| Fabricantes | Fuji Electric | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de 2SK3781-01R (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
|
No Preview Available !
2SK3781-01R
N-CHANNEL SILICON POWER MOSFET
FUJI POWERwww.DataSheet4U.com MOSFET
Super FAP-G Series
Outline Drawings (mm) 200406
Features
High speed switching
No secondary breadown
Avalanche-proof
Low on-resistance
Low driving power
Applications
Switching regulators
DC-DC converters
UPS (Uninterruptible Power Supply)
Maximum ratings and characteristic
Absolute maximum ratings
(Tc=25°C unless otherwise specified)
Equivalent circuit schematic
Item
Drain-source voltage
Symbol
VDS
Ratings Unit Remarks
200 V
Drain(D)
VDSX
200 V VGS=-30V
Continuous Drain Current
ID
73 A
Pulsed Drain Current
Gate-Source Voltage
ID(puls]
VGS
±292
±30
A
V
Gate(G)
Maximum Avalanche current
Non-Repetitive
Maximum Avalanche Energy
Repetitive
Maximum Avalanche Energy
Maximum Drain-Source dV/dt
Peak Diode Recovery dV/dt
Max. Power Dissipation
Operating and Storage
Temperature range
IAR
EAS
EAR
dVDS/dt
dV/dt
PD
Tch
Tstg
73
1115.2
A Note *1
mJ Note *2
41 mJ Note *3
20
5
210
3.13
+150
-55 to +150
kV/µs VDS=< 200V
kV/µs Note *4
W Tc=25°C
Ta=25°C
°C
°C
Source(S)
Note *1:Tch<= 150°C,Repetitive and Non-repetitive
Note *2:StartingTch=25°C,IAS=30A,L=1.98mH,
VCC=48V,RG=50Ω
EAS limited by maximum channel temperature
and avalanch current.
See to the ‘Avalanche Energy’ graph
Note *3:Repetitive rating:Pulse width limited by
maximum channel temperature.
See to the ‘Transient Theemal impedance’
graph
Electrical characteristics (Tc =25°C unless otherwise specified)
Note *4:IF=< -ID, -di/dt=50A/µs,VCC=< BVDSS,Tch=<150°C
Item
Drain-Source Breakdown Voltaget
Gate Threshold Voltage
Symbol
BVDSS
VGS(th)
Test Conditions
ID= 250µA VGS=0V
ID= 250µA VDS=VGS
Min. Typ.
200
3.0
Max. Units
V
5.0 V
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
Drain-Source On-State Resistance
Forward Transcondutance
Input Capacitance
IDSS
IGSS
RDS(on)
gfs
Ciss
VDS=200V VGS=0V
VDS=160V VGS=0V
VGS=±30V VDS=0V
ID=36.5A VGS=10V
ID=36.5A VDS=25V
VDS=75V
Tch=25°C
Tch=125°C
29
12 24
3800
25
250
100
36
5400
µA
nA
mΩ
S
pF
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time ton
Coss
Crss
td(on)
tr
VGS=0V
f=1MHz
VCC=48V ID=36.5A
VGS=10V
530 795
35 52.5
40 60 ns
94 141
Turn-Off Time toff
td(off)
tf
RGS=10 Ω
60 90
30 45
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
QG
QGS
QGD
VSD
trr
Qrr
VCC=100V
ID=73A
VGS=10V
IF=73A VGS=0V Tch=25°C
IF=73A VGS=0V
-di/dt=100A/µs Tch=25°C
80
30
25
1.20
300
3.0
120
45
38
1.50
nC
V
ns
µC
Thermalcharacteristics
Item
Thermal resistance
Symbol
Rth(ch-c)
Rth(ch-a)
Test Conditions
channel to case
channel to ambient
Min. Typ.
Max. Units
0.595 °C/W
40.0 °C/W
www.fujielectric.co.jp/fdt/scd
1
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet 2SK3781-01R.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| 2SK3781-01R | N-CHANNEL SILICON POWER MOSFET | Fuji Electric |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |