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PDF C2878 Data sheet ( Hoja de datos )
| Número de pieza | C2878 | |
| Descripción | NPN Transistor - 2SC2878 | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de C2878 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
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2SC2878
www.DataSheet4U.com
TOSHIBA Transistor Silicon NPN Epitaxial Type
2SC2878
For Muting and Switching Applications
• High emitter-base voltage: VEBO = 25 V (min)
• High reverse hFE: Reverse hFE = 150 (typ.) (VCE = −2 V, IC = −4 mA)
• Low on resistance: RON = 1 Ω (typ.) (IB = 5 mA)
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
Rating
50
20
25
300
60
400
125
−55~125
Unit
V
V
V
mA
mA
mW
°C
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
Symbol
Test Condition
ICBO
VCB = 50 V, IE = 0
IEBO
VEB = 25 V, IC = 0
hFE
(Note)
VCE = 2 V, IC = 4 mA
VCE (sat)
VBE
fT
Cob
IC = 30 mA, IB = 3 mA
VCE = 2 V, IC = 4 mA
VCE = 6 V, IC = 4 mA
VCB = 10 V, IE = 0, f = 1 MHz
JEDEC
TO-92
JEITA
SC-43
TOSHIBA
2-5F1B
Weight: 0.21 g (typ.)
Min Typ. Max Unit
⎯ ⎯ 0.1 μA
⎯ ⎯ 0.1 μA
200 ⎯ 1200
⎯ 0.042 0.1
V
⎯ 0.61 ⎯
V
⎯ 30 ⎯ MHz
⎯ 4.8 7 pF
Turn-on time
ton
⎯ 160 ⎯
Switching time Storage time
tstg
⎯ 500 ⎯
ns
Fall time
tf
Duty cycle <= 2%
Note: hFE classification A: 200~700, B: 350~1200
1
⎯ 130 ⎯
2007-11-01
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet C2878.PDF ] | |
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