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PDF 5STP04D4200 Data sheet ( Hoja de datos )
| Número de pieza | 5STP04D4200 | |
| Descripción | Phase Control Thyristor | |
| Fabricantes | ABB | |
| Logotipo |  |
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VDSM = 4200 V
ITAVM =
470 A
I =wTwRwM.DSataSheet4U.com 740 A
ITSM = 6400 A
VT0 =
1V
rT =
1.5 mΩ
Phase Control Thyristor
5STP 04D4200
Doc. No. 5SYA1025-04 Jan. 02
• Patented free-floating silicon technology
• Low on-state and switching losses
• Designed for traction, energy and industrial applications
• Optimum power handling capability
• Interdigitated amplifying gate
Blocking
Maximum rated values 1)
Symbol Conditions
VDRM, VRRM f = 50 Hz, tp = 10ms
VRSM1
tp = 5ms, single pulse
dV/dtcrit
Exp. to 0.67 x VDRM, Tj = 125°C
Characteristic values
Parameter
Symbol
Forwarde leakage current
IDRM
Reverse leakage current
IRRM
5STP 04D4200
4200 V
4600 V
5STP 04D4000
4000 V
4400 V
1000 V/µs
Conditions
VDRM, Tj = 125°C
VRRM, Tj = 125°C
min typ
5STP 04D3600
3600 V
4000 V
max
100
100
Unit
mA
mA
Mechanical data
Maximum rated values 1)
Parameter
Mounting force
Acceleration
Acceleration
Characteristic values
Parameter
Weight
Surface creepage distance
Air strike distance
Symbol
FM
a
a
Conditions
Device unclamped
Device clamped
Symbol
m
DS
Da
Conditions
min
8
typ
10
max
12
50
100
Unit
kN
m/s2
m/s2
min
25
14
typ
0.3
max
Unit
kg
mm
mm
1) Maximum Ratings are those values beyond which damage to the device may occur
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
1 page  
www.DataSheet4U.com
5STP 04D4200
Fig. 6 Surge on-state current vs. pulse length. Half-
sine wave.
IG (t)
100 %
90 %
IGM ≈ 2..5 A
IGM
IGon ≥ 1.5 IGT
diG/dt ≥ 2 A/µs
tr ≤ 1 µs
tp(IGM) ≈ 5...20µs
Fig. 7 Surge on-state current vs. number of pulses.
Half-sine wave, 10 ms, 50Hz.
10 %
tr
diG/dt
tp (IGM)
tp (IGon)
IGon
t
Fig. 8 Recommendet gate current waveform.
Fig. 9 Max. peak gate power loss.
Fig. 10 Recovery charge vs. decay rate of on-state
current.
Fig. 11 Peak reverse recovery current vs. decay rate
of on-state current.
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1025-04 Jan. 02
page 5 of 6
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet 5STP04D4200.PDF ] | |
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