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5STP04D4200 PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 5STP04D4200
기능 Phase Control Thyristor
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5STP04D4200 데이터시트, 핀배열, 회로
VDSM = 4200 V
ITAVM =
470 A
I =wTwRwM.DSataSheet4U.com 740 A
ITSM = 6400 A
VT0 =
1V
rT =
1.5 m
Phase Control Thyristor
5STP 04D4200
Doc. No. 5SYA1025-04 Jan. 02
Patented free-floating silicon technology
Low on-state and switching losses
Designed for traction, energy and industrial applications
Optimum power handling capability
Interdigitated amplifying gate
Blocking
Maximum rated values 1)
Symbol Conditions
VDRM, VRRM f = 50 Hz, tp = 10ms
VRSM1
tp = 5ms, single pulse
dV/dtcrit
Exp. to 0.67 x VDRM, Tj = 125°C
Characteristic values
Parameter
Symbol
Forwarde leakage current
IDRM
Reverse leakage current
IRRM
5STP 04D4200
4200 V
4600 V
5STP 04D4000
4000 V
4400 V
1000 V/µs
Conditions
VDRM, Tj = 125°C
VRRM, Tj = 125°C
min typ
5STP 04D3600
3600 V
4000 V
max
100
100
Unit
mA
mA
Mechanical data
Maximum rated values 1)
Parameter
Mounting force
Acceleration
Acceleration
Characteristic values
Parameter
Weight
Surface creepage distance
Air strike distance
Symbol
FM
a
a
Conditions
Device unclamped
Device clamped
Symbol
m
DS
Da
Conditions
min
8
typ
10
max
12
50
100
Unit
kN
m/s2
m/s2
min
25
14
typ
0.3
max
Unit
kg
mm
mm
1) Maximum Ratings are those values beyond which damage to the device may occur
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.




5STP04D4200 pdf, 반도체, 판매, 대치품
www.DataSheet4U.com
5STP 04D4200
On-state characteristic model:
VT = A+ BiT + C ln(iT +1) + DIT
Valid for iT = 100 – 6000 A
AB C D
-5.9785e-1 1.5923e-3 4.1963e-1 -5.3599e-2
Fig. 2 On-state characteristics.
Fig. 3 On-state characteristics.
Tj=125°C, 10ms half sine
Fig. 4 On-state power dissipation vs. mean on-
state current. Turn - on losses excluded.
Fig. 5 Max. permissible case temperature vs.
mean on-state current.
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1025-04 Jan. 02
page 4 of 6

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5STP04D4200

Phase Control Thyristor

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