Datasheet.kr   

K7N403609B 데이터시트 PDF




Samsung semiconductor에서 제조한 전자 부품 K7N403609B은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


 

PDF 형식의 K7N403609B 자료 제공

부품번호 K7N403609B 기능
기능 (K7N401809B / K7N403609B) 128Kx36 & 256Kx18 Pipelined NtRAMTM
제조업체 Samsung semiconductor
로고 Samsung semiconductor 로고


K7N403609B 데이터시트 를 다운로드하여 반도체의 전기적 특성과 매개변수에 대해 알아보세요.




전체 18 페이지수

미리보기를 사용할 수 없습니다

K7N403609B 데이터시트, 핀배열, 회로
K7N403609B
K7N401809B
128Kx36 & 256Kx18 Pipelined NtRAMTM
wwwD.DoatcaSuhmeet4eUn.ctomTitle
128Kx36 & 256Kx18-Bit Pipelined NtRAMTM
Revision History
Rev. No.
History
0.0 1. Initial document.
0.1 1. Changed DC parameters
Icc ; from 470mA to 400mA at -25,
from 440mA to 360mA at -22,
from 400mA to 330mA at -20,
from 370mA to 310mA at -18,
ISB ; from 180mA to 160mA at -25,
from 170mA to 155mA at -22,
from 160mA to 150mA at -20,
from 150mA to 140mA at -18,
ISB1 ; from 100mA to 80mA
0.2 1. Add x32 org. and industrial temperature
1.0 1. Final spec release
2. Changed Pin Capacitance
- Cin ; from 5pF to 4pF
- Cout ; from 7pF to 6pF
2.0 1. Remove x32 organization.
2. Remove -25/-22 speed bin
Draft Date
May. 15. 2001
June. 12. 2001
Remark
Preliminary
Preliminary
Aug. 11. 2001
Nov. 15. 2001
Preliminary
Final
Nov. 17. 2003
Final
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.
- 1 - Nov. 2003
Rev 2.0




K7N403609B pdf, 반도체, 판매, 대치품
K7N403609B
K7N401809B
wwwP.DINataCShOeeNt4FUI.GcoUmRATION(TOP VIEW)
128Kx36 & 256Kx18 Pipelined NtRAMTM
DQPc
DQc0
DQc1
VDDQ
VSSQ
DQc2
DQc3
DQc4
DQc5
VSSQ
VDDQ
DQc6
DQc7
VDD
VDD
VDD
VSS
DQd0
DQd1
VDDQ
VSSQ
DQd2
DQd3
DQd4
DQd5
VSSQ
VDDQ
DQd6
DQd7
DQPd
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
100 Pin TQFP
(20mm x 14mm)
K7N403609B(128Kx36)
80 DQPb
79 DQb7
78 DQb6
77 VDDQ
76 VSSQ
75 DQb5
74 DQb4
73 DQb3
72 DQb2
71 VSSQ
70 VDDQ
69 DQb1
68 DQb0
67 VSS
66 VDD
65 VDD
64 ZZ
63 DQa7
62 DQa6
61 VDDQ
60 VSSQ
59 DQa5
58 DQa4
57 DQa3
56 DQa2
55 VSSQ
54 VDDQ
53 DQa1
52 DQa0
51 DQPa
PIN NAME
SYMBOL
PIN NAME
TQFP PIN NO.
A0 - A16
Address Inputs
ADV
Address Advance/Load
WE Read/Write Control Input
CLK Clock
CKE
Clock Enable
CS1 Chip Select
CS2 Chip Select
CS2 Chip Select
BWx(x=a,b,c,d) Byte Write Inputs
OE Output Enable
ZZ Power Sleep Mode
LBO
Burst Mode Control
32,33,34,35,36,37
44,45,46,47,48,49
50,81,82,99,100
85
88
89
87
98
97
92
93,94,95,96
86
64
31
SYMBOL
VDD
VSS
N.C.
PIN NAME
Power Supply(+3.3V)
Ground
No Connect
DQa0~a7
DQb0~b7
DQc0~c7
DQd0~d7
DQPa~Pd
Data Inputs/Outputs
VDDQ
VSSQ
Output Power Supply
(2.5V or 3.3V)
Output Ground
TQFP PIN NO.
14,15,16,41,65,66,91
17,40,67,90
38,39,42,43,83,84
52,53,56,57,58,59,62,63
68,69,72,73,74,75,78,79
2,3,6,7,8,9,12,13
18,19,22,23,24,25,28,29
51,80,1,30
4,11,20,27,54,61,70,77
5,10,21,26,55,60,71,76
Notes : 1. The pin 83 is reserved for address bit for the 8Mb NtRAM.
2. A0 and A1 are the two least significant bits(LSB) of the address field and set the internal burst counter if burst is desired.
- 4 - Nov. 2003
Rev 2.0

4페이지










K7N403609B 전자부품, 판매, 대치품
K7N403609B
K7N401809B
www.DataSheet4U.com
128Kx36 & 256Kx18 Pipelined NtRAMTM
STATE DIAGRAM FOR NtRAMTM
WRITE
READ
READ BEGIN
READ
READ
DS
DESELECT
WRITE
DS
BEGIN WRITE
WRITE
DS DS
BURST BURST
READ
BURST BURST
WRITE
COMMAND
DS
READ
WRITE
BURST
DESELECT
BEGIN READ
BEGIN WRITE
BEGIN READ
BEGIN WRITE
CONTINUE DESELECT
ACTION
Notes : 1. An IGNORE CLOCK EDGE cycle is not shown is the above diagram. This is because CKE HIGH only blocks the clock(CLK) input and does
not change the state of the device.
2. States change on the rising edge of the clock(CLK)
- 7 - Nov. 2003
Rev 2.0

7페이지


구       성 총 18 페이지수
다운로드[ K7N403609B.PDF 데이터시트 ]

당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는

포괄적인 데이터시트를 제공합니다.


구매 문의
일반 IC 문의 : 샘플 및 소량 구매
-----------------------------------------------------------------------

IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한
광범위한 전력 반도체를 판매합니다.

전력 반도체 전문업체

상호 : 아이지 인터내셔날

사이트 방문 :     [ 홈페이지 ]     [ 블로그 1 ]     [ 블로그 2 ]



관련 데이터시트

부품번호상세설명 및 기능제조사
K7N403609B

(K7N401809B / K7N403609B) 128Kx36 & 256Kx18 Pipelined NtRAMTM

Samsung semiconductor
Samsung semiconductor

DataSheet.kr       |      2020   |     연락처      |     링크모음      |      검색     |      사이트맵