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K07N120 데이터시트 PDF




Infineon Technologies에서 제조한 전자 부품 K07N120은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


 

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부품번호 K07N120 기능
기능 Fast IGBT in NPT-technology
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K07N120 데이터시트, 핀배열, 회로
SKW07N120
www.DataSheet4U.com
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
Lower Eoff compared to previous generation
Short circuit withstand time – 10 µs
Designed for:
- Motor controls
- Inverter
- SMPS
NPT-Technology offers:
- very tight parameter distribution
- high ruggedness, temperature stable behaviour
- parallel switching capability
Qualified according to JEDEC1 for target applications
Pb-free lead plating; RoHS compliant
Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
C
G
E
PG-TO-247-3-1
(TO-247AC)
Type
SKW07N120
VCE
1200V
IC
8A
Eoff
0.7mJ
Tj
150°C
Marking Package
K07N120 PG-TO-247-3-21
Maximum Ratings
Parameter
Collector-emitter voltage
DC collector current
TC = 25°C
TC = 100°C
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area
VCE 1200V, Tj 150°C
Diode forward current
TC = 25°C
TC = 100°C
Diode pulsed current, tp limited by Tjmax
Gate-emitter voltage
Short circuit withstand time2
VGE = 15V, 100V VCC 1200V, Tj 150°C
Power dissipation
TC = 25°C
Operating junction and storage temperature
Soldering temperature,
wavesoldering, 1.6mm (0.063 in.) from case for 10s
Symbol
VCE
IC
ICpuls
-
IF
IFpuls
VGE
tSC
Ptot
Tj , Tstg
Ts
Value
1200
16.5
7.9
27
27
Unit
V
A
13
7
27
±20
10
125
-55...+150
260
V
µs
W
°C
1 J-STD-020 and JESD-022
2 Allowed number of short circuits: <1000; time between short circuits: >1s.
Power Semiconductors
1
Rev. 2_1 Apr 06




K07N120 pdf, 반도체, 판매, 대치품
www.DataSheet4U.com
35A
Ic
30A
25A
20A TC=80°C
15A
TC=110°C
10A
5A Ic
0A
10Hz
100Hz
1kHz
10kHz 100kHz
f, SWITCHING FREQUENCY
Figure 1. Collector current as a function of
switching frequency
(Tj 150°C, D = 0.5, VCE = 800V,
VGE = +15V/0V, RG = 47)
150W
125W
100W
75W
50W
25W
0W
25°C 50°C 75°C 100°C 125°C
TC, CASE TEMPERATURE
Figure 3. Power dissipation as a function
of case temperature
(Tj 150°C)
SKW07N120
tp=5µs
15µs
10A
50µs
200µs
1A
1ms
0.1A
DC
1V
10V
100V
1000V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 2. Safe operating area
(D = 0, TC = 25°C, Tj 150°C)
20A
15A
10A
5A
0A
25°C 50°C 75°C 100°C 125°C
TC, CASE TEMPERATURE
Figure 4. Collector current as a function of
case temperature
(VGE 15V, Tj 150°C)
Power Semiconductors
4
Rev. 2_1 Apr 06

4페이지










K07N120 전자부품, 판매, 대치품
www.DataSheet4U.com
5mJ
*) Eon and Ets include losses
due to diode recovery.
4mJ
3mJ
2mJ
Ets*
Eon*
Eoff
1mJ
0mJ
0A 5A 10A 15A 20A
IC, COLLECTOR CURRENT
Figure 13. Typical switching energy losses
as a function of collector current
(inductive load, Tj = 150°C,
VCE = 800V, VGE = +15V/0V, RG = 4 7 ,
dynamic test circuit in Fig.E )
2.0mJ
*) Eon and Ets include losses
due to diode recovery.
1.5mJ
Ets*
1.0mJ
0.5mJ
Eon*
Eoff
0.0mJ
-50°C 0°C 50°C 100°C 150°C
Tj, JUNCTION TEMPERATURE
Figure 15. Typical switching energy losses
as a function of junction temperature
(inductive load, VCE = 800V,
VGE = +15V/0V, IC = 8A, RG = 4 7,
dynamic test circuit in Fig.E )
SKW07N120
2.5mJ
2.0mJ
*) Eon and Ets include losses
due to diode recovery.
Ets*
1.5mJ
1.0mJ
Eon*
Eoff
0.5mJ
0.0mJ
020406080100
RG, GATE RESISTOR
Figure 14. Typical switching energy losses
as a function of gate resistor
(inductive load, Tj = 150°C,
VCE = 800V, VGE = +15V/0V, IC = 8A,
dynamic test circuit in Fig.E )
100K/W
D=0.5
0.2
0.1
10-1K/W
0.05
0.02
0.01
10-2K/W
R,(K/W)
0.1020
0.40493
0.26391
0.22904
R1
τ, (s)
0.77957
0.21098
0.01247
0.00092
R2
10-3K/W
1µs
single pulse C1=τ1/ R1 C2=τ2/R2
10µs 100µs 1ms 10ms 100ms
tp, PULSE WIDTH
Figure 16. IGBT transient thermal
impedance as a function of pulse width
(D = tp / T)
1s
Power Semiconductors
7
Rev. 2_1 Apr 06

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K07N120

Fast IGBT in NPT-technology

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