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부품번호 | K07N120 기능 |
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기능 | Fast IGBT in NPT-technology | ||
제조업체 | Infineon Technologies | ||
로고 | |||
전체 13 페이지수
SKW07N120
www.DataSheet4U.com
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
• Lower Eoff compared to previous generation
• Short circuit withstand time – 10 µs
• Designed for:
- Motor controls
- Inverter
- SMPS
• NPT-Technology offers:
- very tight parameter distribution
- high ruggedness, temperature stable behaviour
- parallel switching capability
• Qualified according to JEDEC1 for target applications
• Pb-free lead plating; RoHS compliant
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
C
G
E
PG-TO-247-3-1
(TO-247AC)
Type
SKW07N120
VCE
1200V
IC
8A
Eoff
0.7mJ
Tj
150°C
Marking Package
K07N120 PG-TO-247-3-21
Maximum Ratings
Parameter
Collector-emitter voltage
DC collector current
TC = 25°C
TC = 100°C
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area
VCE ≤ 1200V, Tj ≤ 150°C
Diode forward current
TC = 25°C
TC = 100°C
Diode pulsed current, tp limited by Tjmax
Gate-emitter voltage
Short circuit withstand time2
VGE = 15V, 100V ≤ VCC ≤ 1200V, Tj ≤ 150°C
Power dissipation
TC = 25°C
Operating junction and storage temperature
Soldering temperature,
wavesoldering, 1.6mm (0.063 in.) from case for 10s
Symbol
VCE
IC
ICpuls
-
IF
IFpuls
VGE
tSC
Ptot
Tj , Tstg
Ts
Value
1200
16.5
7.9
27
27
Unit
V
A
13
7
27
±20
10
125
-55...+150
260
V
µs
W
°C
1 J-STD-020 and JESD-022
2 Allowed number of short circuits: <1000; time between short circuits: >1s.
Power Semiconductors
1
Rev. 2_1 Apr 06
www.DataSheet4U.com
35A
Ic
30A
25A
20A TC=80°C
15A
TC=110°C
10A
5A Ic
0A
10Hz
100Hz
1kHz
10kHz 100kHz
f, SWITCHING FREQUENCY
Figure 1. Collector current as a function of
switching frequency
(Tj ≤ 150°C, D = 0.5, VCE = 800V,
VGE = +15V/0V, RG = 47Ω)
150W
125W
100W
75W
50W
25W
0W
25°C 50°C 75°C 100°C 125°C
TC, CASE TEMPERATURE
Figure 3. Power dissipation as a function
of case temperature
(Tj ≤ 150°C)
SKW07N120
tp=5µs
15µs
10A
50µs
200µs
1A
1ms
0.1A
DC
1V
10V
100V
1000V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 2. Safe operating area
(D = 0, TC = 25°C, Tj ≤ 150°C)
20A
15A
10A
5A
0A
25°C 50°C 75°C 100°C 125°C
TC, CASE TEMPERATURE
Figure 4. Collector current as a function of
case temperature
(VGE ≤ 15V, Tj ≤ 150°C)
Power Semiconductors
4
Rev. 2_1 Apr 06
4페이지 www.DataSheet4U.com
5mJ
*) Eon and Ets include losses
due to diode recovery.
4mJ
3mJ
2mJ
Ets*
Eon*
Eoff
1mJ
0mJ
0A 5A 10A 15A 20A
IC, COLLECTOR CURRENT
Figure 13. Typical switching energy losses
as a function of collector current
(inductive load, Tj = 150°C,
VCE = 800V, VGE = +15V/0V, RG = 4 7 Ω,
dynamic test circuit in Fig.E )
2.0mJ
*) Eon and Ets include losses
due to diode recovery.
1.5mJ
Ets*
1.0mJ
0.5mJ
Eon*
Eoff
0.0mJ
-50°C 0°C 50°C 100°C 150°C
Tj, JUNCTION TEMPERATURE
Figure 15. Typical switching energy losses
as a function of junction temperature
(inductive load, VCE = 800V,
VGE = +15V/0V, IC = 8A, RG = 4 7Ω,
dynamic test circuit in Fig.E )
SKW07N120
2.5mJ
2.0mJ
*) Eon and Ets include losses
due to diode recovery.
Ets*
1.5mJ
1.0mJ
Eon*
Eoff
0.5mJ
0.0mJ
0Ω 20Ω 40Ω 60Ω 80Ω 100Ω
RG, GATE RESISTOR
Figure 14. Typical switching energy losses
as a function of gate resistor
(inductive load, Tj = 150°C,
VCE = 800V, VGE = +15V/0V, IC = 8A,
dynamic test circuit in Fig.E )
100K/W
D=0.5
0.2
0.1
10-1K/W
0.05
0.02
0.01
10-2K/W
R,(K/W)
0.1020
0.40493
0.26391
0.22904
R1
τ, (s)
0.77957
0.21098
0.01247
0.00092
R2
10-3K/W
1µs
single pulse C1=τ1/ R1 C2=τ2/R2
10µs 100µs 1ms 10ms 100ms
tp, PULSE WIDTH
Figure 16. IGBT transient thermal
impedance as a function of pulse width
(D = tp / T)
1s
Power Semiconductors
7
Rev. 2_1 Apr 06
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구 성 | 총 13 페이지수 | ||
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
K07N120 | Fast IGBT in NPT-technology | Infineon Technologies |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |