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PDF BTA41 Data sheet ( Hoja de datos )
| Número de pieza | BTA41 | |
| Descripción | Discrete Triacs | |
| Fabricantes | Sirectifier Semiconductors | |
| Logotipo |  |
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BTB/BTA41
Discrete Triacs(Non-Isolated/Isolated)
G
T2
T1
T2
G
T1
Dimensions TO-247AD
Dim. Millimeter
Min. Max.
A 19.81 20.32
B 20.80 21.46
C 15.75 16.26
D 3.55 3.65
E 4.32 5.49
F 5.4 6.2
G 1.65 2.13
H - 4.5
J 1.0 1.4
K 10.8 11.0
L 4.7 5.3
M 0.4 0.8
N 1.5 2.49
Inches
Min. Max.
0.780 0.800
0.819 0.845
0.610 0.640
0.140 0.144
0.170 0.216
0.212 0.244
0.065 0.084
- 0.177
0.040 0.055
0.426 0.433
0.185 0.209
0.016 0.031
0.087 0.102
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
IT(RMS) RMS on-state current (full sine wave)
ITSM
Non repetitive surge peak on-state
current (full cycle, Tj initial = 25°C)
I²t I²t Value for fusing
dI/dt
Critical rate of rise of on-state current
IG = 2 x I GT , tr <_ 100 ns
VDSM/V RSM
Non repetitive surge peak off-state
voltage
TO-247AD
Tc = 80 °C
F = 60 Hz
F = 50 Hz
t = 16.7 ms
t = 20 ms
tp = 10 ms
F = 120 Hz
Tj = 125°C
tp = 10 ms
Tj = 25°C
41
420
400
880
50
VDRM/VRRM
+ 100
A
A
A²s
A/µs
V
IGM
PG(AV)
Tstg
Tj
Peak gate current
Average gate p ower diss ipation
Storage junction temperature range
Operating junction temperature range
tp = 20 µs
Tj = 125°C
Tj = 125°C
8
1
- 40 to + 150
- 40 to + 125
A
W
°C
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)
Symbol
Test Conditions
Quadrant
Value
IGT (1)
VGT
VD = 12 V
RL = 33 Ω
I - II - III
IV
ALL
VGD VD = VDRM RL = 3.3 kΩ Tj = 125°C ALL
IH (2)
IL
IT = 500 mA
IG = 1.2 IGT
I- III-IV
II
dV/dt (2) VD = 67 % VDRM gate open Tj = 125°C
(dI/dt)c (2) Without snubber
Tj = 125°C
MAX.
MAX.
MIN.
MAX.
MAX.
MIN.
MIN.
50
100
1.3
0.2
80
70
160
500
10
Unit
mA
V
V
mA
mA
V/µs
A/ms
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet BTA41.PDF ] | |
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