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PDF CSA1015 Data sheet ( Hoja de datos )
| Número de pieza | CSA1015 | |
| Descripción | PNP EPITAXIAL PLANAR SILICON TRANSISTOR | |
| Fabricantes | CDIL | |
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Continental Device India Limited
An ISO/TS1w6w9w49.DaantadSISheOe9t40U0.1coCmertified Company
PNP EPITAXIAL PLANAR SILICON TRANSISTOR
CSA1015
TO-92
Plastic Package
ECB
Audio Frequency General Purpose and Driver Stage Amplifier Applications.
Complementary CSC1815
ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
VALUE
Collector Base Voltage
VCBO
50
Collector Emitter Voltage
VCEO
50
Emitter Base Voltage
VEBO
5
Collector Current Continuous
IC
150
Base Current
IB
50
Collector Power Dissipation
PC
625
Operating And Storage Junction
Tj, Tstg
-55 to +125
Temperature Range
THERMAL RESISTANCE
Junction to case
Rth(j-c)
250
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL TEST CONDITION
Collector Cut off Current
ICBO
VCB =50V, IE=0
Emitter Cut off Current
IEBO
VEB=5V, IC = 0
DC Current Gain
*hFE IC =2mA, VCE=6V
hFE IC =150mA, VCE=6V
Collector Emitter Saturation Voltage VCE(sat) IC=100mA,IB= 10mA
Base Emitter Saturation Voltage
VBE(sat)
IC=100mA,IB= 10mA
MIN
70
25
TYP MAX
100
100
400
0.30
1.1
DYNAMIC CHARACTERISTICS
Transition Frequency
Collector Output Capacitance
Base Spreading Resistance
Noise Figure
CLASSIFICATION
*hFE
ft
Cob
rbb'
NF
O
70 - 140
VCE=10V, IC=1mA,
f=100MHz
VCB=10V,IE=0,
f=1MHz
VCB=10V, IE=1mA,
f=30MHz
VCE=6V, IC=0.1mA,
Rg=10Kohms, f=1KHz
Y
120 - 240
80
30
GR
200 - 400
7.0
10
UNITS
V
V
V
mA
mA
mW
ºC
ºC/W
UNITS
nA
nA
V
V
MHz
pF
Ω
dB
CSA1015REV_5 281202D
Continental Device India Limited
Datasheet
Page 1 of 4
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet CSA1015.PDF ] | |
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