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Datasheet TK95 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | TK95 | INSULATED LEAD INTERCHANGEABLE CHIP THERMISTOR
NTC THERMISTORS: TYPE TK95
INSULATED LEAD INTERCHANGEABLE CHIP THERMISTOR
DESCRIPTION:
Epoxy coated interchangeable chip thermistor with PTFE insulated nickel lead-wires.
FEATURES:
• Precision, solid state temperature sensor • Interchangeability down to ±0.1 °C • Suita |  NTC | thermistor |
TK9 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | TK920M3A | InGaAs / InP PIN Chip InGaAs / InP PIN Chip ---TK 920M3A
1. Scope
•The specification applies to photo-diode chips for PIN-TIA. •Type : TK920M3A.
2. Structure
•InGaAs / InP PIN Chip. •P Electrode (anode) : Gold. •N Electrode (cathode) : Gold.
3. Size
•Chip size : 500 × 500μm •Thickness : 250μm •Active  Tyntek data | | |
| 2 | TK920M3B | InGaAs / InP PIN Chip InGaAs / InP PIN Chip ---TK 920M3B
1. Scope
•The specification applies to photo-diode chips for PIN-TIA. •Type : TK920M3B.
2. Structure
•InGaAs / InP PIN Chip. •P Electrode (anode) : Gold. •N Electrode (cathode) : Gold.
3. Size
•Chip size : 500 × 500μm •Thickness : 250μm •Active Tyntek data | | |
| 3 | TK920M3C | InGaAs / InP PIN Chip InGaAs / InP PIN Chip ---TK 920M3C
1. Scope
•The specification applies to photo-diode chips for PIN-TIA. •Type : TK920M3C.
2. Structure
•InGaAs / InP PIN Chip. •P Electrode (anode) : Gold. •N Electrode (cathode) : Gold.
3. Size
•Chip size : 500 × 500μm •Thickness : 200μm •Active Tyntek data | | |
| 4 | TK95 | INSULATED LEAD INTERCHANGEABLE CHIP THERMISTOR
NTC THERMISTORS: TYPE TK95
INSULATED LEAD INTERCHANGEABLE CHIP THERMISTOR
DESCRIPTION:
Epoxy coated interchangeable chip thermistor with PTFE insulated nickel lead-wires.
FEATURES:
• Precision, solid state temperature sensor • Interchangeability down to ±0.1 °C • Suita NTC thermistor | | |
| 5 | TK98P02 | TK98P02 Pin Assignment Pin Assignment
TK98P02
VDD P A 6 /O S C 1 P A 5 /O S C 2
P A 7 /R E S
18 27 36 45
T K 98P 02 8 D I P -B /S O P -B
V SS P A 0 /B Z P A 1 /B Z P A 2 /T M R 0
 ETC data | | |
| 6 | TK9A20DA | MOSFET, Transistor TK9A20DA
MOSFETs Silicon N-Channel MOS (π-MOS)
TK9A20DA
1. Applications
• Switching Voltage Regulators
2. Features
(1) (2) (3) Low drain-source on-resistance: RDS(ON) = 0.26 Ω (typ.) Low leakage current: IDSS = 10 µA (max) (VDS = 200 V) Enhancement mode: Vth = 1.5 to 3.5 V (VDS = 10 V, ID  Toshiba Semiconductor mosfet | | |
| 7 | TK9A45D | Field Effect Transistor TK9A45D
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ)
TK9A45D
Switching Regulator Applications
Ф3.2 ± 0.2 10 ± 0.3
Unit: mm
2.7 ± 0.2 A 3.9 3.0 1.14 ± 0.15 2.8 MAX. 2.54 1 2 3 2.6 ± 0.1 0.69 ± 0.15 Ф0.2 M A
• • • •
Low drain-source ON-resistance: RDS (ON) Toshiba Semiconductor transistor | |
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