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부품번호 | W10NK60Z 기능 |
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기능 | STW10NK60Z | ||
제조업체 | STMicroelectronics | ||
로고 | |||
전체 19 페이지수
www.DataSheet4U.com
STB10NK60Z/-1 - STP10NK60Z/FP
STW10NK60Z
N-CHANNEL 600V-0.65Ω-10A - TO220/FP-D²/I²PAK-TO-247
Zener-Protected SuperMESH™ MOSFET
General features
Type
VDSS RDS(on)
STB10NK60Z
STB10NK60Z-1
STP10NK60ZFP
STP10NK60Z
STW10NK60Z
600 V
600 V
600 V
600 V
600 V
<0.75 Ω
<0.75 Ω
<0.75 Ω
<0.75 Ω
<0.75 Ω
ID
10 A
10 A
10 A
10 A
10 A
Pw
115
115
35
115
156
s TYPICAL RDS(on) = 0.65 Ω
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s GATE CHARGE MINIMIZED
s VERY LOW INTRINSIC CAPACITANCES
s VERY GOOD MANUFACTURING
REPEABILITY
Description
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established
strip-based PowerMESH™ layout. In addition to
pushing on-resistance significantly down, special
care is taken to ensure a very good dv/dt
capability for the most demanding applications.
Such series complements ST full range of high
voltage MOSFETs including revolutionary
MDmesh™ products.
Applications
s HIGH CURRENT, HIGH SPEED SWITCHING
s IDEAL FOR OFF-LINE POWER SUPPLIES,
ADAPTOR AND PFC
s LIGHTING
Package
3
2
1
TO-220
3
2
1
TO-220FP
3
2
1
TO-247
3
1
D²PAK
123
I²PAK
Internal schematic diagram
July 2005
Rev 1
1/19
www.st.com
19
2 Electrical characteristics
STB10NK60Z/-1 - STP10NK60Z/FP - STW10NK60Z
www.DataSheet4U.com
2 Electrical characteristics
(TCASE = 25 °C unless otherwise specified)
Table 5. On/Off
Symbol
Parameter
V(BR)DSS
IDSS
IGSS
VGS(th)
RDS(on)
Drain-Source Breakdown
Voltage
Zero Gate Voltage Drain
Current (VGS = 0)
Gate Body Leakage Current
(VDS = 0)
Gate Threshold Voltage
Static Drain-Source On
Resistance
Test Conditions
ID = 250µA, VGS= 0
VDS = Max Rating,
VGS = ±15V, VDS = 0
VDS= VGS, ID = 250 µA
VGS= 10 V, ID= 20 A
Min.
600
3
Typ.
3.75
0.65
Max.
1
50
±10
4.5
0.75
Unit
V
µA
µA
V
Ω
Table 6. Dynamic
Symbol
Parameter
Test Conditions
gfs Note 4
Ciss
Coss
Crss
Coss eq.
Note 5
Qg
Qgs
Qgd
Forward Transconductance VDS =15V, ID = 4.5A
Input Capacitance
Output Capacitance
VDS =25V, f=1 MHz, VGS=0
Reverse Transfer Capacitance
Equivalent Ouput Capacitance VGS=0, VDS =0V to 480V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD=480V, ID = 8A
VGS =10V
(see Figure 19)
Min.
Typ.
7.8
1370
156
37
Max.
Unit
S
pF
pF
pF
90 pF
50 70 nC
10 nC
25 nC
Table 7. Switching on/off
Symbol
Parameter
td(on)
tr
Turn-on Delay Time
Rise Time
td(off)
tf
tr(Voff)
tf
tc
Turn-off Delay Time
Fall Time
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
VDD=300 V, ID=4A,
RG=4.7Ω, VGS=10V
(see Figure 20)
VDD=300 V, ID=4A,
RG=4.7Ω, VGS=10V
(see Figure 20)
VDD=480 V, ID=8A,
RG=4.7Ω, VGS=10V
(see Figure 20)
Min. Typ. Max. Unit
20 ns
20 ns
55 ns
30 ns
18 ns
18 ns
36 ns
4/19
4페이지 STB10NK60Z/-1 - STP10NK60Z/FP - STW10NK60Z
2 Electrical characteristics
www.DataSheet4U.com
Figure 7. Output Characteristics
Figure 8. Transfer Characteristics
Figure 9. Transconductance
Figure 10. Static Drain-Source on Resistance
Figure 11. Gate Charge vs Gate -Source
Voltage
Figure 12. Capacitance Variations
7/19
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DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |