|
|
PDF HN7G02FU Data sheet ( Hoja de datos )
| Número de pieza | HN7G02FU | |
| Descripción | Power Management Switch Application | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de HN7G02FU (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
|
No Preview Available !
www.DataSheet4U.com
TOSHIBA Multi Chip Discrete Device
HN7G02FU
HN7G02FU
Power Management Switch Application, Inverter Circuit
Application, Driver Circuit Application and Interface
Circuit Application.
Unit: mm
Q1 (transistor): RN2110 Equivalent
Q2 (MOS-FET): 2SK1830 Equivalent
Q1 (Transistor) Absolute Maximum Ratings
(Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Symbol
VCBO
VCEO
VEBO
IC
Rating
−50
−50
−5
−100
Unit
V
V
V
mA
Q2 (MOS-FET) Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Drain-source voltage
Gate-source voltage
DC drain current
Symbol
VDS
VGSS
ID
Rating
20
10
50
Unit
V
V
mA
JEDEC
―
JEITA
―
TOSHIBA
―
Weight: g (typ.)
Q1, Q2 Common Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Marking
Unit
Collector power dissipation
Junction temperature
Storage temperature range
PC
(Note 1)
Tj
Tstg
200
150
−55~150
mW
°C
°C
FT
Note:
Note 1:
Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum Equivalent Circuit (top view)
ratings.
Please design the appropriate reliability upon reviewing the Toshiba
Semiconductor Reliability Handbook (“Handling
654
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
Total rating
Q1 Q2
123
1 2007-11-01
1 page  
www.DataSheet4U.com
100
Common source
VDS = 3 V
50 Ta = 25°C
⎪Yfs⎪ – ID
30
10
5
3
0.5 1
35
10
30 50
Drain current ID (mA)
100
HN7G02FU
100
50
30
10
5
3
1
0.5
0.3
0.1
C – VDS
Common source
VGS = 0 V
f = 1 MHz
Ta = 25°C
Ciss
Coss
Crss
0.3 0.5 1
35
10
Drain-source voltage VDS (V)
20
3000
Common source
VGS = 2.5 V
1000 Ta = 25°C
VDS (ON) – ID
500
300
100
50
30
10
5
0.5
1
35
10
30 50
Drain current ID (mA)
100
t – ID
1000
toff
100 ton
tf
tr
2.5 V
0
VIN
10 μs
10
0.3 1 3
ID VOUT D.U. <= 1%
VIN: tr, tf < 5 ns
(Zout = 50 Ω)
VDD = 3 V
Common source
Ta = 25°C
10 30 100
Drain current ID (mA)
PD – Ta
200
150
100
50
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (°C)
5
2007-11-01
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet HN7G02FU.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| HN7G02FE | Power Management Switch Applications | Toshiba Semiconductor |
| HN7G02FU | Power Management Switch Application | Toshiba Semiconductor |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |