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PDF HN7G09FE Data sheet ( Hoja de datos )
| Número de pieza | HN7G09FE | |
| Descripción | Power Management Switch Applications | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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TOSHIBA Multichip Discrete Device
HN7G09FE
HN7G09FE
Power Management Switch Applications, Inverter Circuit
Applications, Driver Circuit Applications and Interface
Circuit Applications
Unit: mm
Q1 (transistor): RN1104F equivalent
Q2 (MOSFET): SSM3K15FS equivalent
Q1 (Transistor) Absolute Maximum Ratings
(Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Symbol
VCBO
VCEO
VEBO
IC
Rating
50
50
10
100
Unit
V
V
V
mA
Q2 (MOSFET) Absolute Maximum Ratings (Ta = 25°C)
1. EMITTER
2. BASE
3. DRAIN
4. SOURCE
5. GATE
6. COLLECTOR
Characteristic
Symbol
Drain-source voltage
Gate-source voltage
DC drain current
DC
Pulse
VDS
VGSS
ID
IDP
Q1, Q2 Common Ratings (Ta = 25°C)
Rating
20
± 20
100
200
Unit
V
V
mA
JEDEC
―
JEITA
―
TOSHIBA
2-2J1A
Weight:0.003 g (typ.)
Characteristic
Symbol
Rating
Unit
Power dissipation
Junction temperature
Storage temperature range
PC (Note 1)
Tj
Tstg
100
150
−55~150
mW
°C
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Total rating.
Marking
Equivalent Circuit (top view)
654
77
Q1 Q2
123
1
2007-11-01
1 page  
Q2 (MOSFET)
www.DataSheet4U.com
250
200 10 4
150
100
ID – VDS
Common Source
3 Ta = 25°C
2.7
2.5
2.3
50
VGS = 2.1 V
0
0 0.5 1 1.5 2
Drain-Source voltage VDS (V)
HN7G09FE
1000
100
Common Source
VDS = 3 V
ID – VGS
Ta = 100°C
10
25°C
1
−25°C
0.1
0.01
0
123
Gate-Source voltage VGS (V)
4
RDS (ON) –ID
10
Common Source
Ta = 25°C
8
6
VGS = 2.5 V
4
4V
2
0
0 40 80 120 160 200
Drain current ID (mA)
RDS (ON) – VGS
6
Common Source
ID = 10 mA
5
4
Ta = 100°C
3
25°C
2
−25°C
1
0
0 2 4 6 8 10
Gate-Source voltage VGS (V)
RDS (ON) – Ta
8
Common Source
7 ID = 10 mA
6
5
VGS = 2.5 V
4
3 4V
2
1
0
−25 0
25 50
75 100 125 150
Ambient temperature Ta (°C)
Vth – Ta
2
Common Source
1.8 ID = 0.1 mA
1.6 VDS = 3 V
1.4
1.2
1
0.8
0.6
0.4
0.2
0
−25 0
25 50
75 100 125
Ambient temperature Ta (°C)
150
5 2007-11-01
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet HN7G09FE.PDF ] | |
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