Datasheet.kr   

HGTP3N60C3D 데이터시트 PDF




Harris Corporation에서 제조한 전자 부품 HGTP3N60C3D은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


 

PDF 형식의 HGTP3N60C3D 자료 제공

부품번호 HGTP3N60C3D 기능
기능 UFS Series N-Channel IGBT
제조업체 Harris Corporation
로고 Harris Corporation 로고


HGTP3N60C3D 데이터시트 를 다운로드하여 반도체의 전기적 특성과 매개변수에 대해 알아보세요.




전체 7 페이지수

미리보기를 사용할 수 없습니다

HGTP3N60C3D 데이터시트, 핀배열, 회로
HGTP3N60C3D, HGT1S3N60C3D,
SEMICONDUCTOR
HGT1S3N60C3DS
www.DataSheet4U.com
January 1997
6A, 600V, UFS Series N-Channel IGBT
with Anti-Parallel Hyperfast Diodes
Features
• 6A, 600V at TC = 25oC
• 600V Switching SOA Capability
• Typical Fall Time . . . . . . . . . . . . . . 130ns at TJ = 150oC
• Short Circuit Rating
• Low Conduction Loss
• Hyperfast Anti-Parallel Diode
Packaging
JEDEC TO-220AB
COLLECTOR (FLANGE)
EMITTER
COLLECTOR
GATE
Description
The HGTP3N60C3D, HGT1S3N60C3D, and HGT1S3N60C3DS
are MOS gated high voltage switching devices combining the
best features of MOSFETs and bipolar transistors. These
devices have the high input impedance of a MOSFET and the
low on-state conduction loss of a bipolar transistor. The much
lower on-state voltage drop varies only moderately between
25oC and 150oC. The IGBT used is the development type
TA49113. The diode used in anti-parallel with the IGBT is the
development type TA49055.
The IGBT is ideal for many high voltage switching applications
operating at moderate frequencies where low conduction losses
are essential.
PACKAGING AVAILABILITY
JEDEC TO-262AA
EMITTER
COLLECTOR
(FLANGE)
COLLECTOR
GATE
JEDEC TO-263AB
GATE
EMITTER
MA
COLLECTOR
(FLANGE)
PART NUMBER
HGTP3N60C3D
HGT1S3N60C3D
HGT1S3N60C3DS
PACKAGE
TO-220AB
TO-262AA
TO-263AB
BRAND
G3N60C3D
G3N60C3D
G3N60C3D
Terminal Diagram
N-CHANNEL ENHANCEMENT MODE
C
NOTE: When ordering, use the entire part number. Add the suffix 9A to
obtain the TO-263AB variant in tape and reel, i.e. HGT1S3N60C3DS9A.
G
Formerly Developmental Type TA49119.
E
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BVCES
Collector Current Continuous
At
At
TC
TC
=
=
25oC .
110oC
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
. IC25
IC110
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM
Gate-Emitter Voltage Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES
Gate-Emitter Voltage Pulsed. . . . . . . . . . . . . . . . . . . . .
Switching Safe Operating Area at TJ = 150oC, Fig. 14.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
VGEM
SSOA
Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Power Dissipation Derating TC > 25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Lead Temperature for Soldering. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Short Circuit Withstand Time (Note 2) at VGE = 10V, Fig 6 . . . . . . . . . . . . . . . . . . . . .tSC
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. VCE(PK) = 360V, TJ = 125oC, RGE = 82.
HGTP3N60C3D, HGT1S3N60C3D
HGT1S3N60C3DS
600
6
3
24
±20
±30
18A at 480V
33
0.27
-40 to 150
260
8
UNITS
V
A
A
A
V
V
W
W/ oC
oC
oC
µs
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright © Harris Corporation 1997
3-9
File Number 4140.1




HGTP3N60C3D pdf, 반도체, 판매, 대치품
HGTP3N60C3D, HGT1S3N60C3D, HGT1S3N60C3DS
Typical Performance Curves (Continued)
www.D20ataTSJh=ee1t540UoC.c,oRmG = 82, L = 1mH, VCE(PK) = 480V
500 TJ = 150oC, RG = 82, L = 1mH, VCE(PK) = 480V
400
VGE = 10V
10
VGE = 15V
300
VGE = 15V
3
1234 567
ICE, COLLECTOR-EMITTER CURRENT (A)
FIGURE 7. TURN-ON DELAY TIME AS A FUNCTION OF
COLLECTOR-EMITTER CURRENT
8
200
1
VGE = 10V
234 567
ICE, COLLECTOR-EMITTER CURRENT (A)
8
FIGURE 8. TURN-OFF DELAY TIME AS A FUNCTION OF
COLLECTOR-EMITTER CURRENT
80 TJ = 150oC, RG = 82, L = 1mH, VCE(PK) = 480V
VGE = 10V
VGE = 15V
10
300 TJ = 150oC, RG = 82, L = 1mH, VCE(PK) = 480V
200
VGE = 10V or 15V
5
123 4567
ICE, COLLECTOR-EMITTER CURRENT (A)
FIGURE 9. TURN-ON RISE TIME AS A FUNCTION OF
COLLECTOR-EMITTER CURRENT
8
100
1 234 567
ICE, COLLECTOR-EMITTER CURRENT (A)
FIGURE 10. TURN-OFF FALL TIME AS A FUNCTION OF
COLLECTOR-EMITTER CURRENT
8
0.5 TJ = 150oC, RG = 82, L = 1mH, VCE(PK) = 480V
0.4
VGE = 10V
0.3
0.2
VGE = 15V
0.1
0
1 23 4567 8
ICE, COLLECTOR-EMITTER CURRENT (A)
FIGURE 11. TURN-ON ENERGY LOSS AS A FUNCTION OF
COLLECTOR-EMITTER CURRENT
0.8 TJ = 150oC, RG = 82, L = 1mH, VCE(PK) = 480V
0.7
0.6
VGE = 10V or 15V
0.5
0.4
0.3
0.2
0.1
0
1 2 34 56 7 8
ICE, COLLECTOR-EMITTER CURRENT (A)
FIGURE 12. TURN-OFF ENERGY LOSS AS A FUNCTION OF
COLLECTOR-EMITTER CURRENT
3-12

4페이지










HGTP3N60C3D 전자부품, 판매, 대치품
HGTP3N60C3D, HGT1S3N60C3D, HGT1S3N60C3DS
Handling Precautions for IGBTs
wIinnwsswuu.DllaaattietoadnShGdeaaemtt4eUaBg.ceiopmoblyarthTeraenlseicsttroorsstaatrice
susceptible to gate-
discharge of energy
through the devices. When handling these devices, care
should be exercised to assure that the static charge built in
the handler’s body capacitance is not discharged through
the device. With proper handling and application procedures,
however, IGBTs are currently being extensively used in pro-
duction by numerous equipment manufacturers in military,
industrial and consumer applications, with virtually no dam-
age problems due to electrostatic discharge. IGBTs can be
handled safely if the following basic precautions are taken:
1. Prior to assembly into a circuit, all leads should be kept
shorted together either by the use of metal shorting
springs or by the insertion into conductive material such
as ECCOSORBDLD26 or equivalent.
2. When devices are removed by hand from their carriers,
the hand being used should be grounded by any suitable
means - for example, with a metallic wristband.
ECCOSORBDis a Trademark of Emerson and Cumming, Inc.
3. Tips of soldering irons should be grounded.
4. Devices should never be inserted into or removed from
circuits with power on.
5. Gate Voltage Rating - Never exceed the gate-voltage rat-
ing of VGEM. Exceeding the rated VGE can result in
permanent damage to the oxide layer in the gate region.
6. Gate Termination - The gates of these devices are essen-
tially capacitors. Circuits that leave the gate open-circuited
or floating should be avoided. These conditions can result
in turn-on of the device due to voltage buildup on the input
capacitor due to leakage currents or pickup.
7. Gate Protection - These devices do not have an internal
monolithic zener diode from gate to emitter. If gate pro-
tection is required an external zener is recommended.
All Harris Semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Harris Semiconductor products are sold by description only. Harris Semiconductor reserves the right to make changes in circuit design and/or specifications at
any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Harris is
believed to be accurate and reliable. However, no responsibility is assumed by Harris or its subsidiaries for its use; nor for any infringements of patents or other
rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Harris or its subsidiaries.
Sales Office Headquarters
For general information regarding Harris Semiconductor and its products, call 1-800-4-HARRIS
NORTH AMERICA
Harris Semiconductor
P. O. Box 883, Mail Stop 53-210
Melbourne, FL 32902
TEL: 1-800-442-7747
(407) 729-4984
FAX: (407) 729-5321
EUROPE
Harris Semiconductor
Mercure Center
100, Rue de la Fusee
1130 Brussels, Belgium
TEL: (32) 2.724.2111
FAX: (32) 2.724.22.05
ASIA
Harris Semiconductor PTE Ltd.
No. 1 Tannery Road
Cencon 1, #09-01
Singapore 1334
TEL: (65) 748-4200
FAX: (65) 748-0400
SEMICONDUCTOR
3-15

7페이지


구       성 총 7 페이지수
다운로드[ HGTP3N60C3D.PDF 데이터시트 ]

당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는

포괄적인 데이터시트를 제공합니다.


구매 문의
일반 IC 문의 : 샘플 및 소량 구매
-----------------------------------------------------------------------

IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한
광범위한 전력 반도체를 판매합니다.

전력 반도체 전문업체

상호 : 아이지 인터내셔날

사이트 방문 :     [ 홈페이지 ]     [ 블로그 1 ]     [ 블로그 2 ]



관련 데이터시트

부품번호상세설명 및 기능제조사
HGTP3N60C3

6A/ 600V/ UFS Series N-Channel IGBTs

Intersil Corporation
Intersil Corporation
HGTP3N60C3D

6A/ 600V/ UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes

Fairchild Semiconductor
Fairchild Semiconductor

DataSheet.kr       |      2020   |     연락처      |     링크모음      |      검색     |      사이트맵