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PDF EE-SG3 Data sheet ( Hoja de datos )

Número de pieza EE-SG3
Descripción Photo Micro Sensor
Fabricantes Omron 
Logotipo Omron Logotipo



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No Preview Available ! EE-SG3 Hoja de datos, Descripción, Manual

EE-SG3/EE-SG3-B
Photomicrosensor
(Transmissive)
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Features
Note: All units are in millimeters unless otherwise indicated.
Dust-proof model with a 3.6 mm wide slot.
Solder terminal model (EE-SG3).
PCB terminal model (EE-SG3-B).
Two, 3.2 dia.
holes
3.6±0.2
13
19±0.1
25.4±0.2
Absolute Maximum Ratings
(Ta = 25°C)
Optical axis
Emitter
Item
Forward current
Symbol
IF
Rated
value
50 mA
(see note 1)
Four, 0.25
7.62±0.3
0.8
Four, 1.5
2.54
1.2
Four, 0.5
2.54±0.3
0.6 Cross section AA Detector
Pulse forward
current
Reverse voltage
Collector--Emitter
voltage
IFP
VR
VCEO
1A
(see note 2)
4V
30 V
Cross section AA
Emitter--Collector
voltage
VECO
---
Internal Circuit
KC
Unless otherwise specified, the
tolerances are as shown below.
A
E Dimensions
Tolerance
Ambient
temperature
Collector current
Collector
dissipation
Operating
Storage
IC
PC
Topr
Tstg
20 mA
100 mW
(see note 1)
--25°C to
85°C
--30°C to
100°C
Terminal No.
A
K
C
E
Name
Anode
Cathode
Collector
Emitter
3 mm max.
3 < mm 6
6 < mm 10
10 < mm 18
18 < mm 30
±0.3
±0.375
±0.45
±0.55
±0.65
Soldering temperature
Tsol 260°C
(see note 3)
Note:
1. Refer to the temperature rating chart if the ambient
temperature exceeds 25°C.
2. The pulse width is 10 µs maximum with a frequency
of 100 Hz.
3. Complete soldering within 10 seconds.
Ordering Information
Photomicrosensor (Transmissive )
Description
Part number
EE-SG3
EE-SG3-B
Electrical and Optical Characteristics (Ta = 25°C)
Emitter
Detector
Rising time
Item
Forward voltage
Reverse current
Peak emission wavelength
Light current
Dark current
Leakage current
Collector--Emitter saturated
voltage
Peak spectral sensitivity
wavelength
Symbol
VF
IR
λP
IL
ID
ILEAK
VCE (sat)
λP
tr
Value
1.2 V typ., 1.5 V max.
0.01 µA typ., 10 µA max.
940 nm typ.
2 mA min., 40 mA max.
2 nA typ., 200 nA max.
---
0.1 V typ., 0.4 V max.
850 nm typ.
4 µs typ.
Falling time
tf 4 µs typ.
Condition
IF = 30 mA
VR = 4 V
IF = 20 mA
IF = 15 mA, VCE = 10 V
VCE = 10 V, 0 x
---
IF = 30 mA, IL = 1 mA
VCE = 10 V
VILC=C5=m5AV, RL = 100 ,
VCC = 5 V, RL = 100 ,
IL = 5 mA

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