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9T16GH PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 9T16GH
기능 AP9T16GH
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9T16GH 데이터시트, 핀배열, 회로
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Advanced Power
Electronics Corp.
AP9T16GH/J
Pb Free Plating Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Low Gate Charge
Capable of 2.5V gate drive
Single Drive Requirement
RoHS Compliant
G
Description
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
D
S
BVDSS
RDS(ON)
ID
20V
25mΩ
25A
GD
S
TO-252(H)
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25
ID@TC=100
IDM
PD@TC=25
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 4.5V
Continuous Drain Current, VGS @ 4.5V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
TSTG
Storage Temperature Range
TJ Operating Junction Temperature Range
Thermal Data
Symbol
Parameter
Rthj-c
Thermal Resistance Junction-case
Rthj-a
Thermal Resistance Junction-ambient
G
D
S
Rating
20
±16
25
16
90
25
0.2
-55 to 150
-55 to 150
TO-251(J)
Units
V
V
A
A
A
W
W/
Max.
Max.
Value
5
110
Units
/W
/W
Data and specifications subject to change without notice
200908052-1/4




9T16GH pdf, 반도체, 판매, 대치품
AP9T16GH/J
www.DataSheet4U.com
14
I D =18A
12
V DS =10V
V DS =12V
10
V DS =16V
8
6
4
2
0
0 5 10 15 20 25 30
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
100
100us
10 1ms
T c =25 o C
Single Pulse
10ms
100ms
DC
1
0.1
1
10 100
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
VDS
90%
10%
VGS
td(on) tr
td(off) tf
f=1.0MHz
10000
C1000
iss
C oss
C rss
100
1 5 9 13 17 21 25
V DS , Drain-to-Source Voltage (V)
Fig 8. Typical Capacitance Characteristics
1
Duty factor=0.5
0.2
0.1
0.1
0.05
0.02
0.01
Single Pulse
PDM
t
T
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
4.5V
QGS
QG
QGD
Charge
Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4/4

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9T16GH

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