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PDF MSAFA1N100D Data sheet ( Hoja de datos )
| Número de pieza | MSAFA1N100D | |
| Descripción | Fast MOSFET Die | |
| Fabricantes | Microsemi Corporation | |
| Logotipo |  |
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Santa Ana, CA 92704
Phone: (714) 979-8220
Fax: (714) 559-5989
DESCRIPTION:
• N-Channel enhancement mode high density MOSFET die
• Passivation: oxynitride, 4um
• Frontside (top) Metallization: Al/1%Cu for aluminum wire bonding, 9 um typical.
• Backside Metallization: Ti – Ni (1 um) – Ag (0.2 um) for soft solder attach
FEATURES:
• Low On-state resistance
• Avalanche and Surge Rated
• High Freq. Switching
• Ultra Low Leakage Current
• UIS rated
• Available with Lot Acceptance Testing Spec MSAFA1N100DL, "-L" Suffix
MAXIMUM RATINGS:
SYMBOL PARAMETER
VDSS
VGS
ID1
ID2
IDM1
IAR
EAR
EAS
TJ, TSTG
Drain - Source Voltage
Gate - Source Voltage
Continuous Drain Current @ TC = 25° C
Continuous Drain Current @ TC = 100° C
Pulsed Drain Current ¬ @ TC = 25° C
Avalanche Current
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Operating and Storage: Junction Temperature Range
MSAFA1N100D
Fast MOSFET Die for
Implantable Cardio Defibrillator
Applications
VALUE
1000
±20
1
.8
4
1
TBD
TBD
-55 to 150
UNIT
Volts
Volts
Amps
Amps
Amps
Amps
mJ
mJ
°C
STATIC ELECTRICAL CHARACTERISTICS:
SYMBO
L
BVDSS
VGS(TH)2
VGS(TH)1
RDS(ON)1
RDS(ON)2
RDS(ON)3
RDS(ON)4
RDS(ON)5
IDSS1
IDSS2
IDSS3
IGSS1
IGSS2
IGSS3
CHARACTERISTIC / TEST CONDITIONS
Drain - Source Breakdown Voltage (VGS = 0V, ID = 0.25mA)
Gate Threshold Voltage (VGS= VDS, ID = 1 mA, TJ = 37° C
Gate Threshold Voltage (VGS= VDS, ID = 1 mA, TJ = 25° C
Drain – Source On-State Resistance (VGS = 10V, ID = ID1, TJ = 25° C)
Drain – Source On-State Resistance (VGS = 7V, ID = 5…150 mA, TJ= 37° C)
Drain – Source On-State Resistance (VGS = 7V, ID = 5…150 mA, TJ= 25° C)
Drain – Source On-State Resistance (VGS = 7V, ID = 5…150 mA, TJ= 60° C)
Drain – Source On-State Resistance (VGS = 7V, ID = ID1, TJ = 125° C)
Zero Gate Voltage Drain Current (VDS = 80%BVDSS, VGS = 0V, TJ = 25° C)
Zero Gate Voltage Drain Current (VDS = 80%BVDSS, VGS = 0V, TJ = 37° C)
Zero Gate Voltage Drain Current (VDS = 80%BVDSS, VGS = 0V, TJ = 125° C)
Gate-Source Leakage Current (VGS = ±20V, VCE =0V)
Gate-Source Leakage Current (VGS= ±20V VCE =0V), Tj= 37°C
Gate-Source Leakage Current (VGS= ±20V VCE =0V), Tj= 125°C
MIN
1000
2
TYP
3.4
3.5
12.5
12.5
11.5
15
23.5
1
10
MAX
4.5
13.5
10
100
±100
500
UNIT
Volts
Volts
Volts
ohm
ohm
ohm
ohm
ohm
uA
uA
uA
nA
nA
nA
MSC1054.PDF 6/23/99
All Ratings: Device Packaged in TO-3 or Microsemi CoolPack Package, TC = 25°C unless otherwise specified
1 page | ||
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| PDF Descargar | [ Datasheet MSAFA1N100D.PDF ] | |
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