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PDF MSAFX75N10A Data sheet ( Hoja de datos )
| Número de pieza | MSAFX75N10A | |
| Descripción | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
| Fabricantes | Microsemi Corporation | |
| Logotipo |  |
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Santa Ana, CA 92704
PH: (714) 979-8220
FAX: (714) 966-5256
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Features
• Ultrafast body diode
• Rugged polysilicon gate cell structure
• Increased Unclamped Inductive Switching (UIS) capability
• Hermetically sealed, surface mount power package
• Low package inductance
• Very low thermal resistance
• Reverse polarity available upon request
MSAFX75N10A
100 Volts
75 Amps
20 mΩ
N-CHANNEL
ENHANCEMENT MODE
POWER MOSFET
Maximum Ratings @ 25°C (unless otherwise specified)
DESCRIPTION
SYMBOL
MAX.
Drain-to-Source Breakdown Voltage (Gate Shorted to Source)
@ TJ ≥ 25°C
Drain-to-Gate Breakdown Voltage @ TJ ≥ 25°C, RGS= 1 MΩ
Continuous Gate-to-Source Voltage
Transient Gate-to-Source Voltage
Continuous Drain Current
Tj= 25°C
Tj=
100°C
Peak Drain Current, pulse width limited by TJmax
Repetitive Avalanche Current
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Voltage Rate of Change of the Recovery Diode
@ IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C
Power Dissipation
Junction Temperature Range
Storage Temperature Range
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode)
Thermal Resistance, Junction to Case
Mechanical Outline
BVDSS
BVDGR
VGS
VGSM
ID25
ID100
IDM
IAR
EAR
EAS
dv/dt
PD
Tj
Tstg
IS
ISM
θJC
100
100
+/-20
+/-30
75
60
300
75
30
tbd
5.0
300
-55 to +150
-55 to +150
75
300
0.25
DRAIN
UNIT
Volts
Volts
Volts
Volts
Amps
Amps
Amps
mJ
mJ
V/ns
Watts
°C
°C
Amps
Amps
°C/W
GATE
Datasheet# MSC0301A
SOURCE
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet MSAFX75N10A.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| MSAFX75N10A | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | Microsemi Corporation |
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