Datasheet.kr   

GE5N20V 데이터시트 PDF




Gemos에서 제조한 전자 부품 GE5N20V은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


PDF 형식의 GE5N20V 자료 제공

부품번호 GE5N20V 기능
기능 N-Channel MOS Field Effect Transistor
제조업체 Gemos
로고 Gemos 로고


GE5N20V 데이터시트 를 다운로드하여 반도체의 전기적 특성과 매개변수에 대해 알아보세요.



전체 4 페이지수

미리보기를 사용할 수 없습니다

GE5N20V 데이터시트, 핀배열, 회로
GEMOS
www.DataSheet4U.com
MOS FIELD EFFECT TRANSISTOR
GE5N20V
N-CHANNEL MOS FIELD EFFECT TRANSISTOR
DESCRIPTION
The GE5N20V uses advanced trench technology to provide
excellent RDS(ON), rugged avalanche characteristics and less
critical alignment steps therefore a remarkable manufacturing
reproducibility. This device is suitable for use as a Battery
protection or in other Switching application.
Schematic diagram
GENERAL FEATURES
VDS = 20V,ID = 5A
RDS(ON) < 36m@ VGS=2.7V
RDS(ON) < 27.5m@ VGS=4.5V
High Power and current handing capability
Lead free product is acquired
Surface Mount Package
Marking and pin Assignment
APPLICATIONS
Battery protection
Load switch
Power management
TSSOP-8 top view
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Package
Reel Size
5N20V
GE5N20V
TSSOP-8
Ø330mm
Tape width
12mm
ABSOLUTE MAXIMUM RATLNGS(TA=25unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous @ Current-Pulsed
(Note 1)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Symbol
VDS
VGS
ID
IDM
PD
TJTSTG
Limit
20
±12
5
20
1.5
-55 to 150
THERMAL CHARACTERISTICS
Thermal Resistance,Junction-to-Ambient
(Note 2)
RθJA
83
ELECTRICAL CHARACTERISTICS (TA=25unless otherwise noted)
Parameter
Symbol
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
Zero Gate Voltage Drain Current
IDSS
Gate-Body Leakage Current
IGSS
ON CHARACTERISTICS
Gate Threshold Voltage
(Note 3)
VGS(th)
Drain-Source On-State Resistance RDS(ON)
Forward Transconductance
gFS
Condition
VGS=0V,ID=250µA
VDS=18V,VGS=0V
VGS=±12V,VDS=0V
VDS=VGS,,ID=250µA
VGS=4.5V, ID=2.5A
VGS=2.7V, ID=2.5A
VDS=15V, ID=2.5A
Min
20
0.6
Typ
21
26
9.5
Max
1
±100
27.5
36
Quantity
3000 units
Unit
V
V
A
A
W
/W
Unit
V
µA
nA
V
m
m
S
捷拓科技有限公司
地 址:廣東省深圳市福田區南園路 68 号上步大廈 18 樓 I-L 室
電 話:0755-83661391
郵政編碼:518031
傳 真:0755-83661909
公司網站:www.gemostech.com
GEMOS(SHEN ZHEN) TECHNOLOGY LIMITED COMPANY
ADD:Room I-L,18F,Shangbu Bldg.,NO.68 Nanyuan Road, Futian District,Shenzhen China.
Tel:0755-83661391
Fax:0755-83661909
Postcode:518031
Website:www.gemostech.com
© GEMOS TECH CO., LTD. 2007




GE5N20V pdf, 반도체, 판매, 대치품
GEMOS
GE5N20V
ATTENTION:
wAwnwy .aDnadtaSahlleGet4EUM.cOoSm products described or contained herein do not have specifications that can handle applications that
require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose
failure can be reasonably expected to result in serious physical and/or material damage. Consult with your GEMOS
representative nearest you before using any GEMOS products described or contained herein in such applications.
GEMOS assumes no responsibility for equipment failures that result from using products at values that exceed, even
momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products
specifications of any and all GEMOS products described or contained herein.
Specifications of any and all GEMOS products described or contained herein stipulate the performance, characteristics, and
functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and
functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that
cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the
customer’s products or equipment.
GEMOS THCH. Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products
fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could
endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing
equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are
not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all GEMOS products(including technical data, services) described or contained herein are controlled
under any of applicable local export control laws and regulations, such products must not be exported without obtaining the
export license from the authorities concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including
photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission
of GEMOS TECH. Co., Ltd.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume
production. GEMOS believes information herein is accurate and reliable, but no guarantees are made or implied regarding its
use or any infringements of intellectual property rights or other rights of third parties.
Any and all information described or contained herein are subject to change without notice due to product/technology
improvement, etc. When designing equipment, refer to the "Delivery Specification" for the GEMOS product that you intend to
use.
This catalog provides information as of May, 2007. Specifications and information herein are subject to change without notice.
The translation makes effort to be accurate and simply, if Chinese-translation has Difference, Take English explanation as the
standard.
注意:
GEMOS产品说明书中所描述的信息,在没有特殊声明的条件下,不可使用在要求高可靠性的电路中。例如人体供能系统,航天控制系统或其
他应用中。在这种高可靠性应用下,可能会导致严重的物理或者材料的损坏。当设计电路中用到GEMOS的产品时,请就近咨询代理商。
GEMOS对客户在超出说明书中提到的额定值使用产品所造成的损失不承担任何责任,即使是瞬间的使用(例如最大额定值,工作环境范围或
其他参数)。
GEMOS对所有产品在单独应用的情况下保证它的性能﹑典型应用和功能符合说明书中的条件。当使用在客户的产品和设备中,以上条件我们
不做保证。为了了解产品在单独使用下无法估测的情况,GEMOS建议客户在使用过程中,必须不断的评估和反复的测试实际应用在产品和设
备中的问题。
GEMOS一直在努力为客户提供高质量,高可靠性的产品。但是,所有的半导体产品都有一定的失效概率,这些失效概率可能会导致一些事故
的发生,危及人的生命,也可能导致产生浓烟或者大火,招致财产受到损失。当你在设计产品时,必须采用安全指标,这样可以避免事故的发
生。这些措施不仅仅是为了保护电路,电路错误预防所做的安全的设计,多余的设计和结构的设计。
GEMOS的所有产品(包括技术参数和服务)受到当地出口法规的控制,这种产品在没有得到有关部门的同意是不允许出口。
没有GEMOS预先的许可,这些出版物不能以任何的形式或方式重印或传送,包括影印和记录,或任何信息存储和检索系统。
在文中所列的信息(包括电路图和电路参数)仅做泛例参考;这并不是批量生产的保证。GEMOS保证说明书中所提到的任何信息都是准确、
可靠的,但是不对其使用在任何违反知识产权或者第三方其他产权的情况作保证。
所有产品由于工艺/技术的提高等所做的信息变动,GEMOS不做通知。当在设计电路时,请参照将要使用的产品的交付说明书。
这份说明书所提供的信息时间是在20075月。对规格书中信息的更改我们不做通知。
翻译力求简单准确,如中文翻译有歧义,概以英文说明为准。
©GEMOS TECH CO.,LTD.
2006.9.6
Version:1.1
Page 4 of 4

4페이지












구       성 총 4 페이지수
다운로드[ GE5N20V.PDF 데이터시트 ]

당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는

포괄적인 데이터시트를 제공합니다.


구매 문의
일반 IC 문의 : 샘플 및 소량 구매
-----------------------------------------------------------------------

IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한
광범위한 전력 반도체를 판매합니다.

전력 반도체 전문업체

상호 : 아이지 인터내셔날

사이트 방문 :     [ 홈페이지 ]     [ 블로그 1 ]     [ 블로그 2 ]



관련 데이터시트

부품번호상세설명 및 기능제조사
GE5N20V

N-Channel MOS Field Effect Transistor

Gemos
Gemos

DataSheet.kr       |      2020   |     연락처      |     링크모음      |      검색     |      사이트맵