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부품번호 | 27N80 기능 |
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기능 | IXFK27N80 | ||
제조업체 | IXYS Corporation | ||
로고 | |||
전체 4 페이지수
Not for New Designs
HiPerFETwww.DataSheet4U.com TM Power MOSFETs
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low trr
IXFK 27N80
IXFK 25N80
IXFN 27N80
IXFN 25N80
Symbol
Test Conditions
Maximum Ratings
IXFK
IXFN
V
DSS
V
DGR
VGS
V
GSM
ID25
IDM
IAR
EAR
dv/dt
PD
TJ
TJM
Tstg
T
L
VISOL
Md
T
J
= 25°C to 150°C
T
J
=
25°C
to
150°C;
R
GS
=
1
MΩ
Continuous
Transient
800 800
800 800
±20 ±20
±30 ±30
V
V
V
V
TC = 25°C, Chip capability
27N80
25N80
TC = 25°C, pulse width limited by TJM 27N80
TC = 25°C
25N80
27N80
25N80
27
25
108
100
14
13
27
25
108
100
14
13
A
A
A
A
A
A
TC= 25°C
IS≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS,
T
J
≤
150°C,
R
G
=
2
Ω
TC = 25°C
30 30 mJ
5 5 V/ns
500 520
-55 ... +150
150
-55 ... +150
W
°C
°C
°C
1.6 mm (0.063 in) from case for 10 s
300
- °C
50/60 Hz, RMS
IISOL ≤ 1 mA
t = 1 min
t=1s
Mounting torque
Terminal connection torque
-
-
0.9/6
-
2500
3000
V~
V~
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
Weight
10 30 g
Symbol
VDSS
VGH(th)
I
GSS
IDSS
RDS(on)
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ.
max.
VGS = 0 V, ID = 3 mA
VDSS temperature coefficient
VDS = VGS, ID = 8 mA
VGS(th) temperature coefficient
800
2
V
GS
=
±20
V,
DC
V
DS
=
0
VDS = 0.8 • VDSS
VGS = 0 V
TJ = 25°C
TJ = 125°C
VGS = 10 V, ID = 0.5 • ID25
Pulse test, t ≤ 300 µs,
duty cycle d ≤ 2 %
25N80
27N80
0.096
-0.214
V
%/K
4.5 V
%/K
±200 nA
500 µA
2 mA
0.35 Ω
0.30 Ω
VDSS
800 V
800 V
800 V
800 V
ID25
27 A
25 A
27 A
25 A
TO-264 AA (IXFK)
RDS(on)
0.30 Ω
0.35 Ω
0.30 Ω
0.35 Ω
G
D
S
miniBLOC, SOT-227 B (IXFN)
E153432
S
DG
(TAB)
G
S
S
S
D
G = Gate
D = Drain
S = Source
TAB = Drain
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
Features
• International standard packages
• JEDEC TO-264 AA, epoxy meet
UL 94 V-0, flammability classification
• miniBLOC, with Aluminium nitride
isolation
• Low RDS (on) HDMOSTM process
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS)
rated
• Low package inductance
• Fast intrinsic Rectifier
Applications
• DC-DC converters
• Battery chargers
• Switched-mode and resonant-mode
power supplies
• DC choppers
• Temperature and lighting controls
Advantages
• Easy to mount
• Space savings
• High power density
© 2002 IXYS All rights reserved
95561D(6/02)
IXFK 25N80 IXFK 27N80
IXFN 25N80 IXFN 27N80
ww1w2.DataSheet4U.com
10
VVDdSs==340000VV
ID==3207AA
IG==110mmA
8
6
4
2
0
0 100 200 300 400
Gate Charge - nC
Figure 7. Gate Charge
100
500
10000
1000
Ciss
Coss
Crss
f = 1MHz
100
0
5 10 15 20 25 30 35 40
VDS - Volts
Figure 8. Capacitance Curves
80
60
TJ = 125OC
40
TJ = 25OC
20
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4
VSD - Volts
Figure 9. Forward Voltage Drop of the Intrinsic Diode
1
D=0.5
0.1
D=0.2
D=0.1
D=0.05
0.01 D=0.02
D=0.01
Single pulse
D = Duty Cycle
0.001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
Figure 10. Transient Thermal Resistance
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715 6,306,728B1
5,381,025
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
27N80 | IXFK27N80 | IXYS Corporation |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |