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PDF QCA150BA60 Data sheet ( Hoja de datos )

Número de pieza QCA150BA60
Descripción TRANSISTOR MODULE
Fabricantes SanRex Corporation 
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No Preview Available ! QCA150BA60 Hoja de datos, Descripción, Manual

TRANSISTOR MODULE Hi-
QCA150BA60
www.DataSheet4U.com
QCA150BA60 is a dual Darlington power transistor module which has series-connected
ULTRA HIGH hFE, high speed, high power Darlington transistors. Each transistor has a
reverse paralleled fast recovery diode (trr 200ns). The mounting base of the module is
electrically isolated from Semiconductor elements for simple heatsink construction.
IC 150A, VCEX 600V
Low saturation voltage for higher efficiency.
ULTRA HIGH DC current gain hFE. hFE 750
Isolated mounting base
VEBO 10V for faster switching speed.
Applications
Motor Control VVVF , AC/DC Servo, UPS,
Switching Power Supply, Ultrasonic Application
Maximum Ratings
Symbol
Item
Conditions
VCBO
VCEX
VEBO
IC
IC
IB
PT
Tj
Tstg
VISO
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Reverse Collector Current
Base Current
Total power dissipation
Junction Temperature
Storage Temperature
Isolation Voltage
Mounting
Torque
Mounting M6
Terminal M5
Mass
VBE 2V
=pw 1ms
TC 25
A.C.1minute
Recommended Value 1.5 2.5 15 25
Recommended Value 1.5 2.5 15 25
Typical Value
UL;E76102 M
Ratings
QCA150BA60
600
600
10
150 300
150
9
690
40 150
40 125
2500
2.7 28
2.7 28
370
Unit A
Tj 25
Unit
V
V
V
A
A
A
W
V
Nm
( f B)
g
Electrical Characteristics
Symbol
Item
ICBO
IEBO
VCEO SUS
VCEX SUS
hFE
VCE sat
VBE sat
ton
ts
tf
VECO
trr
Rth j-c
Collector Cut-off Current
Emitter Cut-off Current
Collector Emitter Sustaning
Voltage
D.C. Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Switching
Time
On Time
Storage Time
Fall Time
Collector-Emitter Reverse Voltage
Reverse Recovery time
Thermal Impedance
(junction to case)
Conditions
VCB VCBO
VEB VEBO
Ic 1A
Ic 30A IB2 5A
Ic 150A VCE 2.5V
Ic 150A IB 200mA
Ic 150A IB 200mA
Vcc 300V Ic 150A
IB1 300mA IB2 3A
Ic 150A
Vcc 300V Ic 150A
Transistor part
Diode part
di/dt 150A/ s VBE
5V
Min.
450
600
750
Ratings
Typ.
200
Tj 25
Max.
2.0
600
Unit
mA
mA
V
2.5 V
3.0 V
2.0
8.0 s
2.0
1.8 V
ns
0.18
/W
0.6
37

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