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PDF RT1C3904-T12 Data sheet ( Hoja de datos )
| Número de pieza | RT1C3904-T12 | |
| Descripción | Transistor | |
| Fabricantes | Isahaya Electronics | |
| Logotipo |  |
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PRELIMINARY
Notice:this is not a final specification.
Some parametric limits are subject to
wwwc.DhaatnaSghee.et4U.com
RT1C3904-T12
Transistor
For General purpose Application
Silicon NPN Epitaxial Type
RT1C3904 is a one chip transistor.
FEATURE
Mini package for easy mounting.
APPLICATION
General purpose transistor
OUTLINE DRAWING
2.5
0.5 1.5
0.5
UNIT:mm
1
3
2
MAXIMUM RATINGS (Ta=25 )
SYMBOL
PARAMETER
VCEO Collector to Emitter voltage
VCBO
VEBO
Collector to Base voltage
Emitter to Base voltage
I C Collector current
RATINGS
40
60
6.0
200
UNIT
V
V
V
mA
Terminal Connector
1 : Base
2 : Emitter
3 : Collector
EIAJ : SC-59
JEDEC : TO-236 resemblance
THERMAL CHARACTERISTICS
SYMBOL
PD
R JA
PD
R JA
Tj
Tstg
Characteristics
Total Device Dissipation Glass-Epoxi
Board(1) Ta=25
Derate Adove 25
Thermal Resistance Junction to Ambient
Total Device Dissipation
Alumina Substrate(2)Ta=25
Derate Adove 25
Thermal Resistance Junction to Ambient
Junction temperature
Storage temperature
RATINGS
225
UNIT
mW
1.8 mW/
556 /mW
300 mW
2.4 mW/
417 /mW
+150
-55 to +150
ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise noted)
Equivalent Circuit
OLLECTOR
ASE
EMITTER
SYMBOL
PARAMETER
TESTCONDITIONS
V(BR)CEO
V(BR)CBO
V(BR)EBO
I BL
I CEX
C to E break down voltage(3)
C to B break down voltage
E to B break down voltage
Base cut off current
Collector cut off current
I C=1.0mA, I B=0
I C=10 A, I E=0
I C=10 A, I C=0
VCE=30V, V EB=3.0V
VCE=30V, V EB=3.0V
1.Glass-Epoxi=1.0 0.75 3.2in
2.Alumina=0.4 0.3 3.2 in
3.Pulse test
ISAHAYA ELECTRONICS
LIMITS
MIN TYP
40
60
6
CORPORATION
MAX
50
50
UNIT
V
V
V
nA
nA
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet RT1C3904-T12.PDF ] | |
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