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PDF K3639 Data sheet ( Hoja de datos )
| Número de pieza | K3639 | |
| Descripción | MOSFET ( Transistor ) - 2SK3639 | |
| Fabricantes | NEC | |
| Logotipo |  |
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3639
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3639 is N-channel MOS FET device that
features a low on-state resistance and excellent switching
characteristics, and designed for low voltage high current
applications such as DC/DC converter with synchronous
rectifier.
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3639-ZK
TO-252 (MP-3ZK)
(TO-252)
FEATURES
• Low on-state resistance
RDS(on)1 = 5.5 mΩ MAX. (VGS = 10 V, ID = 32 A)
RDS(on)2 = 8.5 mΩ MAX. (VGS = 4.5 V, ID = 32 A)
• Low Ciss: Ciss = 2400 pF TYP.
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
20
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) Note
ID(DC)
ID(pulse)
±64
±256
Total Power Dissipation (TC = 25°C)
PT1 40
Total Power Dissipation
PT2 1.0
Channel Temperature
Tch 150
Storage Temperature
Tstg −55 to +150
V
V
A
A
W
W
°C
°C
Note PW ≤ 10 µs, Duty Cycle ≤ 1%
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D15967EJ3V0DS00 (3rd edition)
Date Published January 2005 NS CP(K)
Printed in Japan
The mark shows major revised points.
2002
1 page  
2SK3639
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
www.DataSCheHeAt4NUN.EcoLmTEMPERATURE
12.5
10
7.5 VGS = 4.5 V
5 10 V
2.5
ID = 32 A
Pulsed
0
- 50 - 25 0 25 50 75 100 125 150
Tch - Channel Temperature - °C
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
10000
1000
100
C iss
C oss
C rss
VGS = 0 V
f = 1 MHz
10
0.01
0.1
1
10
VDS - Drain to Source Voltage - V
100
1000
100
SWITCHING CHARACTERISTICS
td(off)
VDD = 10 V
VGS = 10 V
RG = 10 Ω
tf
tr
10 td(on)
1
0.1
1 10
ID - Drain Current - A
100
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
20 10
VDD = 16 V
16 10 V
8
12 6
VGS
84
42
VDS
ID = 64 A
00
0 10 20 30 40 50
QG - Gate Charge - nC
1000
100
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
VGS = 10 V
10
0V
1
0.1
0.01
Pulsed
0 0.5 1 1.5
VF(S-D) - Source to Drain Voltage - V
1000
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
100
10
1
0.1
di/dt = 100 A/µs
VGS = 0 V
1 10
IF - Diode Forward Current - A
100
Data Sheet D15967EJ3V0DS
5
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet K3639.PDF ] | |
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