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PDF 2SK3638 Data sheet ( Hoja de datos )
| Número de pieza | 2SK3638 | |
| Descripción | SWITCHING N-CHANNEL POWER MOSFET | |
| Fabricantes | NEC | |
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3638
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3638 is N-channel MOS FET device that features a low
on-state resistance and excellent switching characteristics, and
designed for low voltage high current applications such as
DC/DC converter with synchronous rectifier.
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3638-ZK
TO-252 (MP-3ZK)
FEATURES
• Low on-state resistance
RDS(on)1 = 8.5 mΩ MAX. (VGS = 10 V, ID = 32 A)
RDS(on)2 = 15 mΩ MAX. (VGS = 4.5 V, ID = 18 A)
• Low Ciss: Ciss = 1100 pF TYP.
• Built-in gate protection diode
(TO-252)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
20
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) Note
ID(DC)
ID(pulse)
±64
±220
Total Power Dissipation (TC = 25°C)
PT1 36
Total Power Dissipation
PT2 1.0
Channel Temperature
Tch 150
Storage Temperature
Tstg –55 to +150
V
V
A
A
W
W
°C
°C
Note PW ≤ 10 µs, Duty Cycle ≤ 1%
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D15966EJ3V0DS00 (3rd edition)
Date Published January 2005 NS CP(K)
Printed in Japan
The mark shows major revised points.
2002
1 page  
2SK3638
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
www.DataSCheHeAt4NUN.EcoLmTEMPERATURE
25
20
15 VGS = 4.5 V
10 10 V
5
0
-50
ID = 32 A
Pulsed
0 50 100
Tch - Channel Temperature - °C
150
1000
100
SWITCHING CHARACTERISTICS
VDD = 10 V
VGS = 10 V
RG = 10 Ω
td(off)
10
1
0.1
td(on)
tf
tr
1 10
ID - Drain Current - A
100
1000
100
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
VGS = 10 V
10
0V
1
0.1
0.01
0
Pulsed
0.5 1 1.5
VF(S-D) - Source to Drain Voltage - V
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
10000
VGS = 0 V
f = 1 MHz
1000
100
C iss
C oss
C rss
10
0.01
0.1 1 10
VDS - Drain to Source Voltage - V
100
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
20 10
16
VDD = 16 V
10 V
8
12 6
VGS
84
42
VDS
ID = 64 A
00
0 5 10 15 20 25
QG - Gate Charge - nC
1000
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
di/dt = 100 A/µs
VGS = 0 V
100
10
1
0.1
1 10
IF - Diode Forward Current - A
100
Data Sheet D15966EJ3V0DS
5
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet 2SK3638.PDF ] | |
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