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PDF 2SK3638 Data sheet ( Hoja de datos )
| Número de pieza | 2SK3638 | |
| Descripción | MOS Field Effect Transistor | |
| Fabricantes | Guangdong Kexin Industrial | |
| Logotipo |  |
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MOS Field Effect Transistor
2SK3638
MOSFICET
Features
Low on-state resistance
RDS(on)1 = 8.5 m MAX. (VGS = 10 V, ID = 32 A)
RDS(on)2 = 15 m MAX. (VGS = 4.5 V, ID = 18 A)
Low Ciss: Ciss = 1100 pF TYP.
Built-in gate protection diode
TO-252
6.50+0.15
-0.15
5.30+0.2
-0.2
2.30+0.1
-0.1
0.50+0.8
-0.7
Unit: mm
0.80+0.1
-0.1
0.127
max
Absolute Maximum Ratings Ta = 25
Parameter
Drain to source voltage
Gate to source voltage
Drain current
Power dissipation TC=25
TA=25
Channel temperature
Storage temperature
* PW 10 s,Duty Cycle 1%
2.3
4.60+0.15
-0.15
0.60+0.1
-0.1
Symbol
VDSS
VGSS
ID
Idp *
PD
Tch
Tstg
Rating
20
20
64
220
36
1.0
150
-55 to +150
Unit
V
V
A
A
W
1 Gate
2 Drain
3 Source
Electrical Characteristics Ta = 25
Parameter
Drain cut-off current
Gate leakage current
Gate cut off voltage
Forward transfer admittance
Drain to source on-state resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Symbol
IDSS
IGSS
VGS(off)
Yfs
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
ton
tr
toff
tf
QG
QGS
QGD
Testconditons
VDS=20V,VGS=0
VGS= 20V,VDS=0
VDS=10V,ID=1mA
VDS=10V,ID=32A
VGS=10V,ID=32A
VGS=4.5V,ID=18A
VDS=10V,VGS=0,f=1MHZ
ID=32A,VGS(on)=10V,RG=0 ,VDD=10V
VDD = 16V
VGS = 10 V
ID =64A
Min Typ Max Unit
10 A
10 A
1.5 2.5 V
12 25
S
6.8 8.5 m
10 15 m
1100
pF
450 pF
170 pF
10 ns
4.3 ns
35 ns
9.7 ns
22 nC
4.3 nC
5.1 nC
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| Páginas | Total 1 Páginas | |
| PDF Descargar | [ Datasheet 2SK3638.PDF ] | |
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