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PDF RMWL26001 Data sheet ( Hoja de datos )
| Número de pieza | RMWL26001 | |
| Descripción | 23/26 GHZ Lna | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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www.DataSheet4U.com
June 2004
RMWL26001
21–26.5 GHz Low Noise Amplifier MMIC
General Description
The RMWL26001 is a 4-stage GaAs MMIC amplifier
designed as a 21 to 26.5 GHz Low Noise Amplifier for use
in point to point and point to multi-point radios, and various
communications applications. In conjunction with other
Fairchild RF Components amplifiers, multipliers and mixers
it forms part of a complete 26 GHz transmit/receive chipset.
The RMWL26001 utilizes our 0.25µm power PHEMT
process and is sufficiently versatile to serve in a variety of
low noise amplifier applications.
Features
• 4 mil substrate
• Small-signal gain 21dB (typ.)
• 2.9dB noise figure (typ.)
• Chip size 3.0mm x 1.25mm
Device
Absolute Ratings
Symbol
Vd
Vg
Vdg
ID
PIN
TC
Tstg
Rjc
Parameter
Positive DC voltage (+4V Typical)
Negative DC voltage
Simultaneous (Vd–Vg)
Positive DC Current
RF Input Power (from 50Ω source)
Operating Baseplate Temperature
Storage Temperature Range
Thermal Resistance (Channel to Backside)
Ratings
+6
-2
8
100
+8
-30 to +85
-55 to +125
170
Units
V
V
V
mA
dBm
°C
°C
°C/W
©2004 Fairchild Semiconductor Corporation
RMWL26001 Rev. D
1 page  
www.DataTSyhepeitc4Ua.cloCm haracteristics
RMWL26001 26GHz Low Noise Amplifier, Typical Performance
On-Wafer Measurements, IDQ = 65mA, VDD = 4.0V
25
S21
20
0
-5
15
S11
10
5
S 22
-10
-15
-20
0 -25
21 21.5 22 22.5 23 23.5 24 24.5 25 25.5 26 26.5
FREQUENCY (GHz)
RMWL26001 26GHz Low Noise Amplifier, Typical Performance
On-Wafer Measurements, IDQ = 65mA, VDD = 4.0V
25
S11 S21
20
15
S22
10
5
0
0 5 10 15 20 25
FREQUENCY (GHz)
0
-5
-10
-15
-20
-25
30
©2004 Fairchild Semiconductor Corporation
RMWL26001 Rev. D
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet RMWL26001.PDF ] | |
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