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PDF SPI80N03S2L-03 Data sheet ( Hoja de datos )
| Número de pieza | SPI80N03S2L-03 | |
| Descripción | OptiMOS Power-Transistor | |
| Fabricantes | Infineon Technologies | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de SPI80N03S2L-03 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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OptiMOS® Power-Transistor
Feature
• N-Channel
• Enhancement mode
• Logic Level
• Excellent Gate Charge x RDS(on)
product (FOM)
• Superior thermal resistance
• 175°C operating temperature
• Avalanche rated
• dv/dt rated
P- TO262 -3-1
SPI80N03S2L-03
SPP80N03S2L-03,SPB80N03S2L-03
Product Summary
VDS 30 V
RDS(on) max. SMD version 2.8 mΩ
ID 80 A
P- TO263 -3-2
P- TO220 -3-1
Type
SPP80N03S2L-03
SPB80N03S2L-03
SPI80N03S2L-03
Package
P- TO220 -3-1
P- TO263 -3-2
P- TO262 -3-1
Ordering Code
Q67040-S4248
Q67040-S4259
Q67042-S4078
Marking
2N03L03
2N03L03
2N03L03
Maximum Ratings, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current 1)
TC=25°C
ID
Pulsed drain current
TC=25°C
Avalanche energy, single pulse
ID=80 A , VDD=25V, RGS=25Ω
Repetitive avalanche energy, limited by Tjmax2)
Reverse diode dv/dt
IS=80A, VDS=24V, di/dt=200A/µs, Tjmax=175°C
Gate source voltage
Power dissipation
TC=25°C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
ID puls
EAS
EAR
dv/dt
VGS
Ptot
Tj , Tstg
Value
80
80
320
810
30
6
±20
300
-55... +175
55/175/56
Unit
A
mJ
kV/µs
V
W
°C
Page 1
2003-05-09
1 page  
www.DataSheet4U.com
SPI80N03S2L-03
SPP80N03S2L-03,SPB80N03S2L-03
5 Typ. output characteristic
ID = f (VDS); Tj=25°C
parameter: tp = 80 µs
SPP80N03S2L-03
190 Ptot = 300W
A
i h gf
160
140
120
100
80
VGS [V]
a 2.5
b
ec
2.8
3.0
d 3.3
e 3.5
f 3.8
d g 4.0
h 4.5
i 10.0
60
c
40
20 b
a
0
0
0.5
1
1.5
2
2.5
3
3.5
4
V
5
VDS
7 Typ. transfer characteristics
ID= f ( VGS ); VDS≥ 2 x ID x RDS(on)max
parameter: tp = 80 µs
320
A
240
200
160
120
80
40
0
0 0.5
1 1.5
2 2.5
3 3.5 4
V5
VGS
6 Typ. drain-source on resistance
RDS(on) = f (ID)
parameter: VGS
SPP80N03S2L-03
11
mΩ
de
9
8
7
6
5f
g
4
3
2
VGS [V] =
1d ef
3.3 3.5 3.8
g hi
4.0 4.5 10.0
h
i
0
0
20 40 60 80 100 120 A
160
ID
8 Typ. forward transconductance
gfs = f(ID); Tj=25°C
parameter: gfs
250
S
200
175
150
125
100
75
50
25
0
0
20 40
60 80 100 120 140 160 A 200
ID
Page 5
2003-05-09
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet SPI80N03S2L-03.PDF ] | |
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