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PDF SPI80N03S2L-04 Data sheet ( Hoja de datos )
| Número de pieza | SPI80N03S2L-04 | |
| Descripción | Power-Transistor | |
| Fabricantes | Infineon Technologies | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de SPI80N03S2L-04 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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OptiMOS® Power-Transistor
Feature
• N-Channel
• Enhancement mode
• Logic Level
• Excellent Gate Charge x RDS(on)
product (FOM)
• Superior thermal resistance
• 175°C operating temperature
• Avalanche rated
• dv/dt rated
P- TO262 -3-1
SPI80N03S2L-04
SPP80N03S2L-04,SPB80N03S2L-04
Product Summary
VDS 30 V
RDS(on) max. SMD version 3.9 mΩ
ID 80 A
P- TO263 -3-2
P- TO220 -3-1
Type
SPP80N03S2L-04
SPB80N03S2L-04
SPI80N03S2L-04
Package
P- TO220 -3-1
P- TO263 -3-2
P- TO262 -3-1
Ordering Code
Q67042-S4113
Q67042-S4112
Q67042-S4114
Marking
2N03L04
2N03L04
2N03L04
Maximum Ratings, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current 1)
TC=25°C
ID
Pulsed drain current
TC=25°C
Avalanche energy, single pulse
ID=80 A , VDD=25V, RGS=25Ω
Repetitive avalanche energy, limited by Tjmax2)
Reverse diode dv/dt
IS=80A, VDS=24V, di/dt=200A/µs, Tjmax=175°C
Gate source voltage
Power dissipation
TC=25°C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
ID puls
EAS
EAR
dv/dt
VGS
Ptot
Tj , Tstg
Value
80
80
320
380
18
6
±20
188
-55... +175
55/175/56
Unit
A
mJ
kV/µs
V
W
°C
Page 1
2003-05-09
1 page  
www.DataSheet4U.com
5 Typ. output characteristic
ID = f (VDS); Tj=25°C
parameter: tp = 80 µs
SPP80N03S2L-04
190 Ptot = 188W
A
j
ih
160
140
120
100
80
60
40
VGS [V]
a 2.5
b 2.8
c 3.0
d
ge
3.3
3.5
f 3.8
g 4.0
f
h 4.3
i 4.5
j 10.0
e
d
20 c
b
0
0 0.5
1 1.5
2 2.5
3
a
3.5 4
V
5
VDS
7 Typ. transfer characteristics
ID= f ( VGS ); VDS≥ 2 x ID x RDS(on)max
parameter: tp = 80 µs
160
A
SPI80N03S2L-04
SPP80N03S2L-04,SPB80N03S2L-04
6 Typ. drain-source on resistance
RDS(on) = f (ID)
parameter: VGS
SPP80N03S2L-04
14
Ωe
fg
12
11
10
9
8
7h
6i
5
4j
3
2 VGS [V] =
e f gh i j
1 3.5 3.8 4.0 4.3 4.5 10.0
0
0
20
40 60
80 100 A
140
ID
8 Typ. forward transconductance
gfs = f(ID); Tj=25°C
parameter: gfs
35
S
120
100
80
60
40
20
0
0
0.5
1
1.5
2
2.5
3
3.5 V
4.5
VGS
Page 5
25
20
15
10
5
0
0
20 40
60 80 100 120 140 160 A 200
ID
2003-05-09
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet SPI80N03S2L-04.PDF ] | |
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