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WED3EG6417S-D4 데이터시트 PDF




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부품번호 WED3EG6417S-D4 기능
기능 128MB - 16Mx64 DDR SDRAM UNBUFFERED
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로고 White Electronic Designs 로고


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WED3EG6417S-D4 데이터시트, 핀배열, 회로
Whitewww.datasheet4u.com Electronic Designs
WED3EG6417S-D4
*ADVANCED
128MB - 16Mx64 DDR SDRAM UNBUFFERED
FEATURES
DESCRIPTION
n Double-data-rate architecture
n Bi-directional data strobes (DQS)
n Differential clock inputs (CK & CK#)
n Programmable Read Latency 2,2.5 (clock)
n Programmable Burst Length (2,4,8)
n Programmable Burst type (sequential & interleave)
n Edge aligned data output, center aligned data
input
n Auto and self refresh
n Serial presence detect
n JEDEC standard 200 pin SO-DIMM package
n Power supply: 2.5V ± 0.25V
The WED3DG6417S is a 16Mx64 Double Data Rate
SDRAM memory module based on 128Mb DDR SDRAM
component. The module consists of eight 16Mx8 DDR
SDRAMs in 66 pin TSOP package mounted on a 200
pin FR4 Substrate.
Synchronous design allows precise cycle control with
the use of system clock. Data I/O transactions are
possible on both edges and Burst Lenths allow the same
device to be useful for a variety of high bandwidth, high
performance memory system applications.
* This datasheet describes a product that may or may not be under development
and is subject to change or cancellation without notice.
White Electronic Designs Corp. reserves the right to change products or specifications without notice.
March 2002
Rev. # 0
1 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com




WED3EG6417S-D4 pdf, 반도체, 판매, 대치품
Whitewww.datasheet4u.com Electronic Designs
WED3EG6417S-D4
*ADVANCED
ABSOLUTE MAXIMUM RATINGS
Parameter
Voltage on any pin relative to VSS
Voltage on VCC supply relative to VSS
Storage Temperature
Power Dissipation
Short Circuit Current
Symbol
VIN, VOUT
VCC, VCCQ
TSTG
PD
IOS
Value
-0.5 ~ 3.6
-1.0 ~ 3.6
-55 ~ +150
8
50
Units
V
V
°C
W
mA
Note:
Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
DC CHARACTERISTICS
(TA = 0 to 70°C, VCC = 2.5V ±0.2V)
Parameter
Supply Voltage
Supply Voltage
Reference Voltage
Termination Voltage
Input High Voltage
Input Low Voltage
Output High Voltage
Output Low Voltage
Symbol
VCC
VCCQ
VREF
VTT
VIH
VIL
VOH
VOL
Min
2.3
2.3
VCCQ/2-50mV
VREF-0.04
VREF+0.15
-0.3
VTT+0.76
-
Max
2.7
2.7
VCCQ/2-50mV
VREF+0.04
VCCQ-0.3
VREF+0.15
-
VTT-0.76
Unit
V
V
V
V
V
V
V
V
CAPACITANCE
(TA = 23°C, f = 1MHz, VCC = 3.3V, VREF=1.4V ± 200mV)
Parameter
Input Capacitance (A0-A12)
Input Capacitance (RAS#,CAS#,WE#)
Input Capacitance (CKE0)
Input Capacitance (CK0, CK0#)
Input Capacitance (CS0#)
Input Capacitance (DQM0-DQM8)
Input Capacitance (BA0-BA1)
Data input/output capacitance (DQ0-DQ63)(DQS)
Symbol
CIN1
CIN2
CIN3
CIN4
CIN5
CIN6
CIN7
COUT
Min
-
-
-
-
-
-
-
-
Max
45
45
45
40
44
15
45
15
Unit
pF
pF
pF
pF
pF
pF
pF
pF
White Electronic Designs Corp. reserves the right to change products or specifications without notice.
March 2002
Rev. # 0
4 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com

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WED3EG6417S-D4 전자부품, 판매, 대치품
Whitewww.datasheet4u.com Electronic Designs
WED3EG6417S-D4
*ADVANCED
ORDERING INFORMATION
Part Number
WED3EG6417S262D4
WED3EG6417S265D4
WED3EG6417S202D4
Speed
133MHz/266Mbps
133MHz/266Mbps
100MHz/200Mbps
CAS Latency
CL=2
CL-2.5
CL=2
PACKAGE DIMENSIONS
All dimensions are in inches
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White Electronic Designs Corp. reserves the right to change products or specifications without notice.
March 2002
Rev. # 0
7 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com

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WED3EG6417S-D4

128MB - 16Mx64 DDR SDRAM UNBUFFERED

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