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DG2618 데이터시트 PDF




Vishay Siliconix에서 제조한 전자 부품 DG2618은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


 

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부품번호 DG2618 기능
기능 (DG2616 - DG2618) Dual SPDT Analog Switch
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DG2618 데이터시트, 핀배열, 회로
www.datasheet4u.com
DG2616, DG2617, DG2618
Vishay Siliconix
Low Voltage, Dual SPDT Analog Switch
with Charge Pump
DESCRIPTION
The DG2616, DG2617, DG2618 are monolithic CMOS
analog switching products designed for high performance
switching of analog signals. Combining low power, high
speed, low on-resistance and small physical size, the
DG2616, DG2617, DG2618 are ideal for portable and
battery powered applications.
The DG2616, DG2617, DG2618 have built-in charge-pump
circuitry which lowers the minimum supply voltage to + 1.5 V
while maintaining low on-resistance. The Control circuitry
allows the DG2616, DG2617, DG2618 to operate in different
configurations.
Built on Vishay Siliconix's low voltage process, the DG2616,
DG2617, DG2618 has an epitaxial layer that prevents
latch-up. Break-before-make is guaranteed.
The DG2616, DG2617, DG2618 are manufactured in space
saving DFN-10 (3.0 x 3.0 mm). And as a committed partner
to the community and the environment, Vishay Siliconix
manufactures this product with lead (Pb)-free device
terminations and is 100 % RoHS compliant.
FEATURES
Low voltage operation (1.5 V to 3.6 V)
• Low on-resistance - RON: 4.2 Ω typ. at 2.7 V
• Fast switching: tON = 39 ns
tOFF = 8 ns
DFN-10 package
BENEFITS
Reduced power consumption
• High accuracy
• Reduce board space
• TTL/1.8 V logic compatible
High bandwidth
APPLICATIONS
Cellular phones
• Audio and video signal routing
• PCMCIA cards
Battery operated systems
RoHS
COMPLIANT
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
TRUTH TABLE DG2616
Logic
NC1, 2
0 ON
1 OFF
NO1, 2
OFF
ON
TRUTH TABLE DG2618
SHDN/EN Logic IN Logic NC1, 2
0 0 ON
0 1 OFF
1 x OFF
NO1, 2
OFF
ON
OFF
Charge Pump
ON
ON
OFF
TRUTH TABLE DG2617
SHDN/EN Logic IN Logic NC1, 2 NO1, 2 Charge Pump
0
0 ON OFF
ON
0
1 OFF ON
ON
1
0 ON OFF
OFF
1
1 OFF ON
OFF
ORDERING INFORMATION
Temp. Range
Package
Part Number
- 40 °C to 85 °C
DFN-10
DG2616DN-T1-E4
DG2617DN-T1-E4
DG2618DN-T1-E4
Document Number: 74411
S-82149-Rev. B, 08-Sep-08
www.vishay.com
1




DG2618 pdf, 반도체, 판매, 대치품
DG2616,www.datasheet4u.com DG2617, DG2618
Vishay Siliconix
SPECIFICATIONS V+ = 3 V
Parameter
Symbol
Test Conditions
Otherwise Unless Specified
V+ = 3 V, ± 10 %, VIN = 0.5 or 1.4 Ve
Temp.a
Limits
- 40 °C to 85 °C
Min.b Typ.c Max.b
Unit
Power Supply
Power Supply Range
V+
1.5 3.6 V
Power Supply Current
I+
V+ = 3.6 V, VIN = 0 or V+, SHDN/EN = 0 V
Full
V+ = 3.6 V, VIN = 0 or V+, SHDN/EN = V+
104 300
0.1 2
µA
Notes:
a. Room = 25 °C, Full = as determined by the operating suffix.
b. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
c. Typical values are for design aid only, not guaranteed nor subject to production testing.
d. Guarantee by design, not subjected to production test.
e. VIN = input voltage to perform proper function.
f. Crosstalk measured between channels.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
4
Document Number: 74411
S-82149-Rev. B, 08-Sep-08

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DG2618 전자부품, 판매, 대치품
www.datasheet4u.com
TEST CIRCUITS
DG2616, DG2617, DG2618
Vishay Siliconix
Switch
Input
Logic
Input
V+
V+
NO or NC
COM
IN
GND
0V
Switch Output
VOUT
RL
50 Ω
CL
35 pF
Logic
Input
Switch
Output
CL (includes fixture and stray capacitance)
( )VOUT
= VCOM
RL
RL + RON
Figure 1. Switching Time
VINH
VINL
50 %
tr < 5 ns
tf < 5 ns
0.9 x VOUT
0V
tON
tOFF
Logic "1" = Switch On
Logic input waveforms inverted for switches that have
the opposite logic sense.
V+
V+
VNO
NO
COM
NC
VNC
IN
GND
RL
50 Ω
VO
CL
35 pF
Logic VINH
Input
VINL
VNC = VNO
VO
Switch 0 V
Output
90 %
tD
tr < 5 ns
tf < 5 ns
tD
CL (includes fixture and stray capacitance)
Figure 2. Break-Before-Make Interval
V+
Vgen
Rgen
+
VIN = 0 - V+
V+
NC or NO
IN
GND
COM
VOUT
CL = 1 nF
VOUT
IN
On
Δ VOUT
Off
On
Q = ΔVOUT x CL
Figure 3. Charge Injection
IN depends on switch configuration: input polarity
determined by sense of switch.
Document Number: 74411
S-82149-Rev. B, 08-Sep-08
www.vishay.com
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