Datasheet.kr   

F6654 데이터시트 PDF




Allegro MicroSystems에서 제조한 전자 부품 F6654은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


PDF 형식의 F6654 자료 제공

부품번호 F6654 기능
기능 STR-F6654
제조업체 Allegro MicroSystems
로고 Allegro MicroSystems 로고


F6654 데이터시트 를 다운로드하여 반도체의 전기적 특성과 매개변수에 대해 알아보세요.




전체 16 페이지수

미리보기를 사용할 수 없습니다

F6654 데이터시트, 핀배열, 회로
Series STR-F6600
INTERIM DATA SHEET
OFF-LINE QUASI-RESONANT
www.dat(aSshuebejte4uc.ct otmo change without notice)
FLYBACK SWITCHING REGULATORSFebruary 22, 2000
The Series STR-F6600 is specifically designed to satisfy the require-
ments for increased integration and reliability in off-line quasi-resonant
flyback converters. The series incorporates a primary control and drive
circuit with discrete avalanche-rated power MOSFETs.
FDBK
OSC.
LATCH
Covering the power range from below 25 watts up to 300 watts for
100/115/230 VAC inputs, and up to 150 watts for 85 to 265 VAC
universal input, these devices can be used in a range of applications,
from battery chargers and set top boxes, to televisions, monitors, and
UVLO industrial power supply units.
OVP
TSD
Cycle-by-cycle current limiting, under-voltage lockout with hyster-
esis, over-voltage protection, and thermal shutdown protects the power
supply during the normal overload and fault conditions. Over-voltage
protection and thermal shutdown are latched after a short delay. The
latch may be reset by cycling the input supply. Low-current startup and
a low-power standby mode selected from the secondary circuit completes
a comprehensive suite of features. The series is provided in a five-pin
Dwg. PK-011-1
overmolded TO-3P style package, affording dielectric isolation without
compromising thermal characteristics.
ABSOLUTE MAXIMUM RATINGS
at TA = +25°C
Control Supply Voltage, VIN . . . . . . . . 35 V
Drain-Source Voltage, VDS
Series STR-F6620 . . . . . . . . . . . . 450 V
Series STR-F6630 . . . . . . . . . . . . 500 V
Series STR-F6650 . . . . . . . . . . . . 650 V
Series STR-F6670 . . . . . . . . . . . . 900 V
Drain Switching Current, ID . . .
Peak Drain Current, IDM . . . . . .
Avalanche Energy, EAS . . . . . . .
OCP/FB Voltage Range,
See Table
See Table
See Table
VOCP . . . . . . . . . . . . . . . -0.3 V to +6 V
Package Power Dissipation, PD
control (VIN x IIN(ON)) . . . . . . . . . 0.8 W
total . . . . . . . . . . . . . . . . . . . See Graph
FET Channel Temperature, TJ . . . +150°C
Internal Frame Temperature, TF . . +125°C
Operating Temperature Range,
TA . . . . . . . . . . . . . . . -20°C to +125°C
Storage Temperature Range,
TS . . . . . . . . . . . . . . . . -40°C to +125°C
FEATURES
s Flyback Operation with Quasi-Resonant Soft Switching
for Low Power Dissipation and EMI
s Rugged Avalanche-Rated MOSFET
s Choice of MOSFET Voltage and rDS(on)
s Full Over-Current Protection (no blanking)
s Under-Voltage Lockout with Hysteresis
s Over-Voltage Protection
s Direct Voltage Feedback
s Low Start-up Current (<400 µA)
s Low-Frequency, Low-Power Standby Operation
s Overmolded 5-Pin Package
Always order by complete part number, e.g., STR-F6652 .
TM




F6654 pdf, 반도체, 판매, 대치품
Series STR-F6600
OFF-LINE
QUASI-RESONANT FLYBACK
SWITCHING REGULATORS
ELECTRICAL CHARACTERISTICS
www.datasheet4u.com
at
TA
=
+25°C,
VIN
=
18
V
(unless
otherwise
specified).
Limits
Characteristic
Symbol Test Conditions
Min. Typ. Max. Units
On-State Voltage
Under-Voltage Lockout
Over-Voltage Threshold
Drain-Source Breakdown Voltage
Drain Leakage Current
On-State Resistance
Maximum Off Time
Minimum Pulse Duration for Input of
Quasi-Resonant Signals
Minimum Off Time
Feedback Threshold Voltage
VINT
VINQ
VOVP(th)
VBR(DSS)
IDSS
rDS(ON)
toff
tw(th)
toff
VFDBK
Turn-on, increasing VIN
Turn-off, decreasing VIN
Turn-off, increasing VIN
ID = 300 µA
At VDS max
VS = 10 V, ID = 0.9 A, TJ = +25°C
Drain waveform high
14.4 16 17.6
9.0 10 11
20.5 22.5 24.5
VDS max –
––
300
– – see table
45 – 55
V
V
V
V
µA
µs
Drain waveform high1
Drain waveform high1
Drain waveform low to high1
Oscillation synchronized2
– – 1.0
– – 1.5
0.68 0.73 0.78
1.3 1.45 1.6
µs
µs
V
V
Over-Current Protection/Feedback
Sink Current
Latch Holding Current
Latch Release Voltage
Switching Time
Supply Current
Insulation RMS Voltage
IOCP/FB
IIN(OVP)
VIN
tf
IIN(ON)
IIN(OFF)
VWM(RMS)
VOCP/FB = 1.0 V
1.2 1.35 1.5 mA
VIN reduced from 24.5 V to 8.5 V
– 400 µA
IIN 20 µA, VIN reduced from 24.5 V 6.6 – 8.4 V
VDD = 200 V, ID = 0.9 A
– – 250 ns
Operating3
– – 30 mA
Increasing VIN prior to oscillation
All terminals simultaneous refer-
ence to a metal plate against
the backside
2000
100 µA
–V
Thermal Resistance
Thermal Shutdown
RθJM
TJ
Output channel to mounting frame
140
Notes: Typical Data is for design information only.
1. Feedback is square wave, VIM = 2.2 V, th = 1 µs, tl = 35 µs.
2. For quasi-resonant operation, the input signal must be longer than tw(th) and greater than VFDBK.
3. Feedback is square wave, VIM = 2.2 V, th = 4 µs, tl = 1 µs.
1.75 °C/W
°C
4
115 Northeast Cutoff, Box 15036
TM
Worcester, Massachusetts 01615-0036 (508) 853-5000

4페이지










F6654 전자부품, 판매, 대치품
www.datasheet4u.com
Series STR-F6600
OFF-LINE
QUASI-RESONANT FLYBACK
SWITCHING REGULATORS
Functional Description and Operation (cont’d)
+ OUTPUT
4
DRIVE
REG.
UVLO
OVER-VOLT.
PROTECT
R
FAULT
LATCH
REF.
SQ
+
TSD
OSC
3
2
+ 1.45 V
+ 0.73 V
1
5
+
+
VOLTAGE
SENSE
– OUTPUT
Figure 6 – Series STR-F6600 Typical Application
Dwg. EK-003-5A
WARNING These devices are designed to be operated at lethal voltages and energy levels. Circuit
designs that embody these components must conform with applicable safety requirements. Precau-
tions must be taken to prevent accidental contact with power-line potentials. Do not connect
grounded test equipment.
The use of an isolation transformer is recommended during circuit development and breadboarding.
Soft Start with Voltage Feedback (refer to figure 7)
Output voltage control is achieved by sensing the opto-
coupled feedback current (proportional to the output
voltage error signal) across resistor R4 and summing this
with the drain current ramp on R5. The signal on pin 1 is
therefore the opposite of the output voltage error signal
and the drain current ramp. The dc bias signal across R4 is
thus a function of the load. Consequently at light load, the
bias signal on R4 is closer to the threshold voltage of the
comparator.
To eliminate the possibility of false shutdown at
MOSFET turn on (when there is a current spike due to the
discharge of primary capacitance), a constant-current sink
of 1.35 mA is turned on, effectively lowering the input
impedance on pin 1, and momentarily increasing the
shutdown threshold.
7

7페이지


구       성 총 16 페이지수
다운로드[ F6654.PDF 데이터시트 ]

당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는

포괄적인 데이터시트를 제공합니다.


구매 문의
일반 IC 문의 : 샘플 및 소량 구매
-----------------------------------------------------------------------

IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한
광범위한 전력 반도체를 판매합니다.

전력 반도체 전문업체

상호 : 아이지 인터내셔날

사이트 방문 :     [ 홈페이지 ]     [ 블로그 1 ]     [ 블로그 2 ]



관련 데이터시트

부품번호상세설명 및 기능제조사
F6653

STR-F6653

Allegro Microsystems
Allegro Microsystems
F6654

STR-F6654

Allegro MicroSystems
Allegro MicroSystems

DataSheet.kr       |      2020   |     연락처      |     링크모음      |      검색     |      사이트맵