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PDF 1SS404 Data sheet ( Hoja de datos )

Número de pieza 1SS404
Descripción Silicon Epitaxial Schottky Barrier Type
Fabricantes Toshiba Semiconductor 
Logotipo Toshiba Semiconductor Logotipo



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No Preview Available ! 1SS404 Hoja de datos, Descripción, Manual

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
1SS404
1SS404
High Speed Switching Applications
www.datasheet4u.com
Two-pin small packages are suitable for higher mounting densities
Low forward voltage : VF (3) = 0.38 V (typ.)
Low reverse current: IR = 50 μA (max)
Small total capacitance: CT = 46 pF (typ.)
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Maximum (peak) reverse voltage
VRM
25 V
Reverse voltage
VR 20 V
Maximum (peak) forward current IFM 700 mA
Average forward current
IO 300 mA
Power dissipation
Junction temperature
P 200 (Note 1) mW
Tj 125 °C
USC
Storage temperature range
Operating temperature range
Tstg
55 ~ 125
°C
Topr
40 ~ 100
°C
JEDEC
Note: Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
JEITA
TOSHIBA
1-1E1A
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
Weight: 0.004 g (typ.)
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Mounted on a glass epoxy board of 20 mm × 20 mm,
pad dimension 4 mm × 4 mm.
Marking
Equivalent Circuit (top view)
S5
Electrical Characteristics (Ta = 25°C)
Characteristics
Forward voltage
Reverse current
Total capacitance
Symbol
VF (1)
VF (2)
VF (3)
IR
CT
Test Condition
IF = 1 mA
IF = 10 mA
IF = 300 mA
VR = 20 V
VR = 0, f = 1 MHz
1
Min Typ. Max Unit
0.16
0.22
V
0.38 0.45
⎯ ⎯ 50 μA
46 pF
2007-11-01

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