(PDF) MS1011 Datasheet - RF AND MICROWAVE TRANSISTORS HF SSB APPLICATIONS

Número de pieza	MS1011
Descripción	RF AND MICROWAVE TRANSISTORS HF SSB APPLICATIONS
Fabricantes	Advanced Power Technology
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No Preview Available ! 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 RF AND MICROWAVE TRANSISTORS www.datasheet4u.com HF SSB APPLICATIONS Features • OPTIMIZED FOR SSB • 30 MHz • 50 VOLTS • IMD — 30 dB • GOLD METALLIZATION • COMMON EMITTER • POUT = 250 W PEP WITH 14.5 dB GAIN MS1011 DESCRIPTION: The MS1011 is a 50 V epitaxial silicon NPN planar transistor designed primarily for SSB and VHF communications. This device utilizes emitter ballasting for improved ruggedness and reliability. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol Parameter VCBO VCEO VEBO IC PDISS TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature Value 110 55 4 40 330 +200 –65 to +150 Unit V V V A W °C °C THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance 0.4 °C/W Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. 1 page

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PDF MS1011 Data sheet ( Hoja de datos )