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Datasheet BUV47 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | BUV47 | POWER TRANSISTORS(9A/400V/90W) A
A
A
|  Mospec Semiconductor | transistor |
| 2 | BUV47 | NPN SILICON POWER TRANSISTORS BUV47, BUV47A NPN SILICON POWER TRANSISTORS
Copyright © 1997, Power Innovations Limited, UK AUGUST 1978 - REVISED MARCH 1997
q q q
Rugged Triple-Diffused Planar Construction 9 A Continuous Collector Current 1000 Volt Blocking Capability
B
SOT-93 PACKAGE (TOP VIEW) 1
C
2
E
3 Pin 2 is in electr |  Power Innovations Limited | transistor |
| 3 | BUV47 | NPN SILICON POWER TRANSISTORS
BUV47, BUV47A NPN SILICON POWER TRANSISTORS
● ● ●
Rugged Triple-Diffused Planar Construction 9 A Continuous Collector Current 1000 Volt Blocking Capability
B
SOT-93 PACKAGE (TOP VIEW) 1
C
2
E
3 Pin 2 is in electrical contact with the mounting base.
MDTRAAA
absolute |  Bourns Electronic Solutions | transistor |
| 4 | BUV47 | SILICON POWER TRANSISTOR SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
BUV47 BUV47B
www.datasheet4u.com
DESCRIPTION ·With TO-3PN package. ·High voltage. ·Very high switching speed. APPLICATIONS ·Suited for 220V switchmode power supply, DC and AC motor control.
PINNING PIN 1 2 3 Base Col |  SavantIC | transistor |
| 5 | BUV47 | (BUVxx) Power Transistor Free Datasheet http://www.datasheetlist.com/
|  ETC | transistor |
BUV Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | BUV10 | Silicon NPN Power Transistor www.DataSheet.co.kr
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
BUV10
DESCRIPTION ·High Switching Speed ·High Current Capability
APPLICATIONS ·Designed for high current,high speed,high power applications.
Absolute maximum ratings(Ta=25℃)
SYMBOL VCBO  Inchange Semiconductor transistor | | |
| 2 | BUV10N | Bipolar NPN Device in a Hermetically sealed TO3 Metal Package BUV10N
Dimensions in mm (inches).
25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135)
6.35 (0.25) 9.15 (0.36)
Bipolar NPN Device in a Hermetically sealed TO3 Metal Package.
38.61 (1.52) 39.12 (1.54)
1.47 (0.058) 1.60 (0.063)
29.9 (1.177) 30.4 (1.197)
16.64 (0.655) 17  Seme LAB data | | |
| 3 | BUV11 | 20 AMPERES NPN SILICON POWER METAL TRANSISTOR 200 VOLTS 150 WATTS MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by BUV11/D
SWITCHMODE Series NPN Silicon Power Transistor
. . . designed for high current, high speed, high power applications. • High DC current gain; hFE min. = 20 at IC = 6 A • Low VCE(sat), VCE(sat) max. = 0.6 V at IC = 6 A • Ver  Motorola Inc transistor | | |
| 4 | BUV11 | SITCHMODE Series NPN Silicon Power Transistor MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by BUV11/D
SWITCHMODE Series NPN Silicon Power Transistor
. . . designed for high current, high speed, high power applications. • High DC current gain; hFE min. = 20 at IC = 6 A • Low VCE(sat), VCE(sat) max. = 0.6 V at IC = 6 A • Ver  ON Semiconductor transistor | | |
| 5 | BUV12 | Bipolar NPN Device in a Hermetically sealed TO3 Metal Package BUV12
Dimensions in mm (inches).
25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135)
6.35 (0.25) 9.15 (0.36)
Bipolar NPN Device in a Hermetically sealed TO3 Metal Package.
38.61 (1.52) 39.12 (1.54)
1.47 (0.058) 1.60 (0.063)
29.9 (1.177) 30.4 (1.197)
16.64 (0.655) 17. Seme LAB data | | |
| 6 | BUV18 | Silicon NPN Power Transistor INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BUV18
DESCRIPTION ·Low Collector Saturation Voltage-
: VCE(sat)= 0.6V(Max.) @IC= 40A ·High Switching Speed
APPLICATIONS ·High efficiency converters ·Motor drive control ·Switching regulator
Absolute maximum ra Inchange Semiconductor transistor | | |
| 7 | BUV18 | (BUV18 / BUV19) NPN High Current Switching Transistors w
w
w
.d
e e h s a t a
. u t4
m o c
 ST Microelectronics transistor | |
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