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PDF SMCTTA20N20A10 Data sheet ( Hoja de datos )
| Número de pieza | SMCTTA20N20A10 | |
| Descripción | Power Management | |
| Fabricantes | Solidtron | |
| Logotipo |  |
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Description
This voltage controlled Solidtron (VCS) discharge switch utilizes
an n-type MOS-Controlled Thyristor mounted on a ThinPakTM,
ceramic "chip-scale" hybrid.
www.daTtahsehVeeCtS4uf.ecaotmures the high peak current capability and low On-
state voltage drop common to SCR thyristors combined with
extremely high dI/dt capability. This semiconductor is intended
for the control of high power circuits with the use of very small
amounts of input energy and is ideally suited for capacitor
discharge applications.
The ThinPakTM Package is a perforated, metalized ceramic
substrate attached to the silicon using 302oC solder. An epoxy
underfill is applied to protect the high voltage termination from
debris. All exterior metal surfaces are tinned with 63pb/37sn
solder providing the user with a circuit ready part. It's small size
and low profile make it extremely attractive to high dI/dt
applications where stray series inductance must be kept to a
minimum.
Features
l 2000V Peak Off-State Voltage
l 20A Continuous Rating
l 4kA Surge Current Capability
l High dI/dt Capability
l Low On-State Voltage
l MOS Gated Control
l Low Inductance Package
SMCT TA20N20A10
Advanced Pulse Power Device
N-MOS VCS, ThinPakTM
Preliminary Data Sheet
Package
Gate Return
Bond Area
Gate Bond Area
Anode
Bond Area
Opposite side
Schematic Symbol
Cathode Bond Area
ThinPakTM
Anode (A)
Gate (G)
Gate Return (GR)
Cathode (K)
Absolute Maximum Ratings
Peak Off-State Voltage
Peak Reverse Voltage
Off-State Rate of Change of Voltage Immunity
Continuous Anode Current at 110oC
Repetitive Peak Anode Current (Pulse Width=1uSec)
Nonrepetitive Peak Anode Current (Pulse Width=250nSec)
Rate of Change of Current
Continuous Gate-Cathode Voltage
Peak Gate-Cathode Voltage
Minimum Negative Gate-Cathode Voltage Required for Garanteed Off-State
Maximum Junction Temperature
Maximum Soldering Temperature (Installation)
SYMBOL
VDRM
VRRM
dv/dt
IA110
IASM
IASM
dI/dt
VGKS
VGKM
VGK(OFF-MIN)
TJM
VALUE
2000
-5
1000
20
2000
4000
20
+/-20
+/-25
-5
150
260
UNITS
V
V
V/uSec
A
A
A
kA/uSec
V
V
V
oC
oC
This SILICON POWER product is protected by one or more of the following U.S. Patents:
5,521,436
5,585,310
5,248,901
5,366,932
5,497,013
5,532,635
5,446,316
5,557,656
5,564,226
5,517,058
4,814,283
5,135,890
5,105,536
5,777,346
5,446,316
5,577,656
5,473,193
5,166,773
5,209,390
5,139,972
5,103,290
5,028,987
5,304,847
5,569,957
4,958,211
5,111,268
5,260,590
5,350,935
5,640,300
5,184,206
5,206,186
5,757,036
5,777,346
5,995,349
4,801,985
4,476,671
4,857,983
4,888,627
4,912,541
5,424,563
5,399,892
5,468,668
5,082,795
4,980,741
4,941,026
4,927,772
4,739,387
4,648,174
4,644,637
4,374,389
4,750,666
4,429,011
5,293,070
Preliminary Data Sheet - Product Status : First Production : This data sheet contains preliminary data . Supplementary data will be
published at a later date. Silicon Power reserves the right to make changes at any time without notice.
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet SMCTTA20N20A10.PDF ] | |
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