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FQP11N40C 데이터시트 PDF




Fairchild Semiconductor에서 제조한 전자 부품 FQP11N40C은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


 

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부품번호 FQP11N40C 기능
기능 400V N-Channel MOSFET
제조업체 Fairchild Semiconductor
로고 Fairchild Semiconductor 로고


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FQP11N40C 데이터시트, 핀배열, 회로
FQP11N40C / FQPF11N40C
N-Channel QFET® MOSFET
400 V, 10.5 A, 530 mΩ
November 2013
Features
• 10.5 A, 400 V, RDS(on) = 530 m(Max.) @ VGS = 10 V,
ID = 5.25 A
• Low Gate Charge (Typ. 28 nC)
• Low Crss (Typ. 85 pF)
• 100% Avalanche Tested
Description
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor’s proprietary
planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to reduce
on-state resistance, and to provide superior switching
performance and high avalanche energy strength. These
devices are suitable for switched mode power supplies,
active power factor correction (PFC), and electronic lamp
ballasts.
D
GDS
TO-220
GDS
TO-220F
G
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted.
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
Parameter
Drain to Source Voltage
Drain Current
Drain Current
-Continuous (TC = 25oC)
-Continuous (TC = 100oC)
- Pulsed
Gate to Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate above 25oC
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction to Case, Max
Thermal Resistance, Junction to Ambient, Max
FQP11N40C FQPF11N40C
400
10.5 10.5 *
6.6 6.6 *
42 42 *
± 30
360
11
13.5
4.5
135 44
1.07 0.35
-55 to +150
300
FQP11N40C
0.93
62.5
FQPF11N40C
2.86
62.5
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Unit
°C/W
°C/W
©2003 Fairchild Semiconductor Corporation
FQP11N40C / FQPF11N40C Rev. C1
1
www.fairchildsemi.com




FQP11N40C pdf, 반도체, 판매, 대치품
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
1.2
1.1
1.0
0.9
0.8
-100
Notes :
1. VGS = 0 V
2. ID = 250μA
-50 0 50 100 150
TJ, Junction Temperature [°C]
200
Figure 8. On-Resistance Variation
vs. Temperature
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
Notes :
1. VGS = 10 V
2. ID = 5.25 A
-50 0
50 100 150
TJ, Junction Temperature [°C]
200
Figure 9-1. Maximum Safe Operating Area
of FQP11N40C
Figure 9-2. Maximum Safe Operating Area
of FQPF11N40C
102
101
100
10-1
100
Operation in This Area
is Limited by R DS(on)
10 μs
100 μs
1 ms
10 ms
100 ms
DC
Notes :
1. TC = 25°C
2. TJ = 150°C
3. Single Pulse
101 102
VDS, Drain-Source Voltage [V]
103
102
101
100
10-1
100
Operation in This Area
is Limited by R DS(on)
10 μs
100 μs
1 ms
10 ms
100 ms
DC
Notes :
1. TC = 25°C
2. TJ = 15°C
3. Single Pulse
101 102
VDS, Drain-Source Voltage [V]
103
Figure10.MaximumDrainCurrent
12
10
8
6
4
2
0
25 50 75 100 125 150
TC, Case Temperature [°C]
©2003 Fairchild Semiconductor Corporation
FQP11N40C / FQPF11N40C Rev. C1
4
www.fairchildsemi.com

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FQP11N40C 전자부품, 판매, 대치품
Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
I SD
Driver
RG
VGS
+
VDS
_
L
Same Type
as DUT
• dv/dt controlled by RG
• ISD controlled by pulse period
VDD
VGS
( Driver )
I SD
( DUT )
VDS
( DUT )
D = --GG--aa--tt-ee--PP--u-u-ll-ss-ee---WP--e-i-dr-ito-h-d-
10V
IFM , Body Diode Forward Current
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VSD
Body Diode
Forward Voltage Drop
VDD
©2003 Fairchild Semiconductor Corporation
FQP11N40C / FQPF11N40C Rev. C1
7
www.fairchildsemi.com

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관련 데이터시트

부품번호상세설명 및 기능제조사
FQP11N40

400V N-Channel MOSFET

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FQP11N40C

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