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Datasheet QST608 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | QST608 | Capacitive touch sensor device QST608
www.datasheet4u.com
Capacitive touch sensor device with rotor or slider plus five extra keys and I2C interface
Preliminary Data
Features
■ ■ ■ ■ ■ ■ ■ ■ ■
Patented charge-transfer design Rotor (or slider) plus five extra keys Up to five general-purpose outputs I2C interfa |  ST Microelectronics | sensor |
QST Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | QST104 | Capacitive touch sensor device 4 keys
QST104
Capacitive touch sensor device 4 keys with individual key state outputs or I2C interface
Features
■ ■ ■ ■ ■ ■ ■ ■ ■
Patented charge-transfer design Up to 4 independent QTouch™ keys supported Individual key state outputs or I2C interface Fully “debou  STMicroelectronics sensor | | |
| 2 | QST108 | Capacitive touch sensor device 8 keys
QST108
Capacitive touch sensor device 8 keys with individual key state outputs or I2C interface
Not For New Design
Features
■ ■ ■ ■ ■ ■ ■ ■ ■
Patented charge-transfer design Up to 8 independent QTouch™ keys supported Individual key state outputs or I2C inte STMicroelectronics sensor | | |
| 3 | QST2 | General purpose amplification
QST2
Transistors
General purpose amplification (−12V, −3A)
QST2
zApplication Low frequency amplifier Driver zExternal dimensions (Unit : mm)
2.8 1.6
(1)
zFeatures 1) Collector current is large. 2) Collector saturation voltage is low. −250mV VCE(sat) at IC = −3A / IB =  ROHM Semiconductor data | | |
| 4 | QST2D4002-T-A | Display 深圳合力泰微电子有限公司
QUALITY CO.， LTD.
SPECIFICATION
Revision: Product Model: A QST2D4002-T-A
Designed by Terry
R&D Checked by
Quality Department by
Approved by
Approval by Customer
OK NG，Problem survey:
Approved By
1. If there is no special request fr  QUALITY data | | |
| 5 | QST3 | General purpose amplification
QST3
Transistors
General purpose amplification (−30V, −5A)
QST3
zApplication Low frequency amplifier Driver zExternal dimensions (Unit : mm)
2.8 1.6
(1)
(4) (5) (6)
zFeatures 1) Collector current is large. 2) Collector saturation voltage is low. −250mV VCE(sat) At IC = ROHM Semiconductor data | | |
| 6 | QST4 | Low frequency amplifier
QST4 Transistors
Low frequency amplifier
QST4
zApplication Low frequency amplifier Driver zExternal dimensions (Unit : mm)
2.8 1.6
(1) (4) (5) (6)
0.4
zFeatures 1) A collector current is large. 2) VCE(sat) : max. −250mV At IC=−1.5A / IB=−30mA
0.16
(3) (2)
Each lead h ROHM Semiconductor amplifier | | |
| 7 | QST5 | Low frequency amplifier
QST5
Transistors
Low frequency amplifier
QST5
zApplication Low frequency amplifier Driver zExternal dimensions (Unit : mm)
2.8 1.6
(4)
(2)
(3)
0.4
(5)
zFeatures 1) A collector current is large. 2) VCE(sat) : max. −370mV At lc= −1.5A / lB= −75mA
(6)
(1)
Each lead ROHM Semiconductor amplifier | |
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