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PDF APTGT30H170T3 Data sheet ( Hoja de datos )
| Número de pieza | APTGT30H170T3 | |
| Descripción | IGBT Power Module | |
| Fabricantes | Advanced Power Technology | |
| Logotipo |  |
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APTGT30H170T3
Full - Bridge
Trench IGBT® Power Module
www.datasheet4u.com
VCES = 1700V
IC = 30A @ Tc = 80°C
13 14
Q1 Q3
18 CR1 CR3
19
22 7
23 8
26 Q2 CR2 CR4 Q4
27
11
10
4
3
29 30
15
31 32
R1 16
28 27 26 25
29
30
23 22
20 19 18
16
15
31
32
234
78
14
13
10 11 12
All multiple inputs and outputs must be shorted together
Example: 13/14 ; 29/30 ; 22/23 …
Application
• Welding converters
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
• Motor control
Features
• Trench + Field Stop IGBT® Technology
- Low voltage drop
- Low tail current
- Switching frequency up to 20 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
• Kelvin emitter for easy drive
• Low stray inductance
• High level of integration
• Internal thermistor for temperature monitoring
Benefits
• Outstanding performance at high frequency
operation
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Solderable terminals both for power and signal for
easy PCB mounting
• Low profile
• Easy paralleling due to positive TC of VCEsat
• Each leg can be easily paralleled to achieve a phase
leg of twice the current capability
Absolute maximum ratings
Symbol
Parameter
VCES Collector - Emitter Breakdown Voltage
IC Continuous Collector Current
ICM
VGE
PD
RBSOA
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
Reverse Bias Safe Operation Area
TC = 25°C
TC = 80°C
TC = 25°C
TC = 25°C
Tj = 125°C
Max ratings
1700
45
30
70
±20
210
120A@1600V
Unit
V
A
V
W
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website – http://www.advancedpower.com
1-5
1 page  
APTGT30H170T3
www.datasheet4u.com
Operating Frequency vs Collector Current
45
40 ZVS
35
30
25
VCE=900V
D=50%
RG=18 Ω
TJ=125°C
TC=75°C
20 ZCS
15
10
5 hard
switching
0
0 10 20 30 40 50 60
IC (A)
Forward Characteristic of diode
100
80 TJ=25°C
60
40
20 TJ=125°C
0
0 0.5 1 1.5 2 2.5 3
VF (V)
1
0.9 0.9
0.8
0.7 0.7
0.6
0.5 0.5
0.4
0.3 0.3
0.2 0.1
0.1
0 0.05
0.00001
maximum Effective Transient Thermal Impedance, Junction to Pulse Duration
Diode
0.0001
Single Pulse
0.001
0.01
0.1
rectangular Pulse Duration (Seconds)
1
10
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
APT website – http://www.advancedpower.com
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| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet APTGT30H170T3.PDF ] | |
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