(PDF) 2STC4468 Datasheet - High power NPN epitaxial planar bipolar transistor

Número de pieza	2STC4468
Descripción	High power NPN epitaxial planar bipolar transistor
Fabricantes	STMicroelectronics
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No Preview Available ! www.datasheet4u.com 2STC4468 High power NPN epitaxial planar bipolar transistor General features ■ High breakdown voltage VCEO=140V ■ Complementary to 2STA1695 ■ Fast-switching speed ■ Typical ft =20MHz ■ Fully characterized at 125 oC Applications ■ Audio power amplifier Description The device is a NPN transistor manufactured using new BiT-LA (Bipolar transistor for linear amplifier) technology. The resulting transistor shows good gain linearity behaviour. Recommended for 70W to 100W high fidelity audio frequency amplifier output stage. Preliminary data 3 2 1 TO-3P Internal schematic diagram Order codes Part Number 2STC4468 Marking 2STC4468 Electrical ratings Package TO-3P Packaging Tube June 2007 Rev 1 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. 1/9 www.st.com 9 1 page 2STC4468 1.2 Test circuit Figure 7. Resistive load switching test circuit www.datasheet4u.com 1) Fast electronic switch 2) Non-inductive resistor Electrical characteristics 5/9 5 Page

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PDF 2STC4468 Data sheet ( Hoja de datos )